High-performance InAlAs/InGaAs HEMTs and their application to a 40-GHz monolithic amplifier

Conference on Solid State Devices and Materials

Volumn , Issue , 1992, Pages 573-575

  Umeda, Yohtaro ^a   Enoki, Takatomo ^a   Arai, Kunihiro ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE;

MONOLITHIC AMPLIFIERS; ULTRALOW NOISE AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027004803     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1992.b-3-4     Document Type: Conference Paper

References (10)