Ultrahigh-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GalnAs HEMT Technology

IEEE Electron Device Letters

Volumn 9, Issue 9, 1988, Pages 482-484

  Mishra, Umesh K ^a   Jensen, Joseph F ^a   Brown, April S ^a   Thompson, M A ^a   Jelloian, L M ^a   Beaubien, Randall S ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CIRCUITS; MICROWAVE DEVICES;

BUFFERED-FET-LOGIC (BFL); CAPACITIVELY ENHANCED LOGIC (CEL); HEMT DEVICES; RING OSCILLATORS;

INTEGRATED CIRCUITS, DIGITAL;

EID: 0024072050     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.6952     Document Type: Article

References (9)

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2. A. S. Brown, U. K. Mishra, J. A. Henige, and M. J. Delaney, “The impact of epitaxial layer design and quality on GalnAs-AlInAs HEMT structures”, J. Vac. Sci. Technol. B, pp. 678-681, Mar.-Apr. 1988.
3. P. J. T. Mellor and A. W. Livingstone, “Capacitor coupled logic using GaAs depletion mode FETs”, Electron. Lett., vol. 16. no. 19, pp. 749-750, Sept. 1980.
4. J. F. Jensen, L. G. Salmon, D. S. Deakin, and M. J. Delaney, “Ultrahigh-speed GaAs static frequency divider”, in IEDM Tech. Dig., Dec. 1986, pp. 476-479.
5. J. F. Jensen et al., “25GHz static frequency dividers in AlInAs-GalnAs HEMT technology”, in ISSCC Dig. Tech. Papers, Feb. 1988, pp. 268-269.
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7. Y. Awano, M. Kosugi, T. Mimura, and M. Abe, “Performance of a quarter-micrometer-gate ballistic electron HEMT”, IEEE Electron Device Lett., vol. EDL-8, no. 10, pp. 451-453, Oct. 1987.
8. K. C. Wang, P. M. Asbeck, M. F. Chang, G. J. Sullivan, and D. L. Miller, “A 20-GHz frequency divider implemented with heterojunction bipolar transistors”, IEEE Electron Device Lett., vol. EDL-8, no. 9, pp. 383-385, Sept. 1987.
9. Y. Yamauchi et al., “22GHz divide by four frequency divider using AlGaAs/GaAs HBTs”, Electron. Lett., vol. 23, no. 17, pp. 881-882. Aug. 13 1987.