W-Band High Efficiency InP-Based Power HEMT with 600 GHz fmax

IEEE Microwave and Guided Wave Letters

Volumn 5, Issue 7, 1995, Pages 230-232

  Smith, P M ^a   Liu, S M J ^a   Kao, M Y ^a   Ho, P ^a   Wang, S C ^a   Duh, K H ^a   Fu, S T ^a   Chao, P C ^a  

^a Lockheed Martin Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EPITAXIAL GROWTH; GATES (TRANSISTOR); HETEROJUNCTIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO;

W BAND POWER TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029342529     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.392284     Document Type: Article

References (14)

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