High-Performance W-Band Monolithic Pseudomorphic InGaAs HEMT LNA’s and Design/Analysis Methodology

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 3, 1992, Pages 417-428

  Wang, Huei ^a   Dow, Gee Samuel ^a   Allen, Barry R ^a   Ton, Thuy Nhung ^a   Tan, Kin L ^a   Chang, Kwo Wei ^a   Chen, Tzu hung ^a   Berenz, John ^a   Lin, T Shyan ^a   Liu, Po Hsin ^a   Streit, Dwight C ^a   Bui, Stacey B ^a   Raggio, Jeffrey J ^a   Chow, P Daniel ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC--MILLIMETER WAVES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS, HIGH ELECTRON MOBILITY--DESIGN;

LOW NOISE AMPLIFIERS (LNAS);

AMPLIFIERS, MICROWAVE;

EID: 0026839169     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.121716     Document Type: Article

References (15)

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