60 GHz power performance of 0.1μm gate-length InAlAs/InGaAs HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 411-414

  Ho, Pin ^a   Smith, P M ^a   Hwang, K C ^a   Wang, S C ^a   Kao, M Y ^a   Chao, P C ^a   Liu, S M J ^a  

^a Martin Marietta Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; ELECTRON BEAM LITHOGRAPHY; GAIN MEASUREMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PERFORMANCE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

GATE LENGTH; POWER DENSITY; PSEUDOMORPHISM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028201638     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)