0.1-μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 81-84

  Enoki, Takatomo ^a   Ito, Hiroshi ^a   Ikuta, Kenji ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; GATES (TRANSISTOR); INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

DOPING DENSITY; DRY ETCHING SELECTIVITY; GATE LENGTH; GATE RECESS DEPTH; RECESS ETCH STOPPER; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029217064     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)