0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C

Electronics Letters

Volumn 31, Issue 17, 1995, Pages 1430-1431

  Kimura, S ^a   Imai, Y ^a   Umeda, Y ^a   Enoki, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Distributed amplifiers; High electron mobility transistors

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; NEGATIVE RESISTANCE; OHMIC CONTACTS; RESISTORS; SCHEMATIC DIAGRAMS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION LINE THEORY; WAVEGUIDES;

DC MATCHING TERMINATION; DISTRIBUTED BASEBAND AMPLIFIERS; LOSS COMPENSATION CIRCUIT;

AMPLIFIERS (ELECTRONIC);

EID: 0029354745     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19951032     Document Type: Article

References (3)

1. DEIBELE, S., and BEYER, J.B.: ‘Attenuation compensation in distributed amplifier design’. IEEE Trans., 1989, MTT-37, pp. 1425-1433
2. UMEDA, Y.: ‘Silicon nitride passivated ultra low noise InAlAs/InGaAs HEMTs with n+-InGaAs/n+-InAlAs cap layer’. IEICE Trans. Electron. 1992, E-75C, pp. 649-655
3. MAJIDI-AHY, R., NISHIMOTO, C.K., RIAZIAT, M., GLENN, M., SILVERMAN, S., WENG, S.-L., PAO, Y.-C., ZCLASIUK, G.A., BANDY, S.G., and TON, Z.C.H.: ‘5-100GHz InP coplanar waveguide MMIC distributed amplifier’, IEEE Trans., 1990, MTT-38, pp. 1986-1993