Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 193-196

  Enoki, Takatomo ^a   Umeda, Yohtaro ^a   Osafune, Kazuo ^a   Ito, Hiroshi ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DELAY CIRCUITS; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC CIRCUITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON WAFERS;

PN-LEVEL SHIFT DIODES; RECESS ETCH STOPPER; SOURCE COUPLED FET LOGIC; THRESHOLD VOLTAGE; TRANSMISSION DELAYS; ULTRA HIGH SPEED INTEGRATED CIRCUITS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0029519984     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)