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Volumn 26, Issue 18, 1990, Pages 1425-1426

W-Band Monolithic Oscillator Using InAiAs/InGaAs HEMT

Author keywords

Microwave devices and components; Oscillators

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC--MILLIMETER WAVES; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS, FIELD EFFECT;

EID: 0025469912     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19900914     Document Type: Article
Times cited : (19)

References (11)
  • 2
    • 0024016057 scopus 로고
    • X-band varactor tuned monolithic GaAs oscillators
    • Pataut, G., Pavlidis, D.: ‘X-band varactor tuned monolithic GaAs oscillators’, Int. J. Electronics, 1988, 64, pp. 731-751
    • (1988) Int. J. Electronics , pp. 731-751
    • Pataut, G.1    Pavlidis, D.2
  • 3
    • 0022306439 scopus 로고
    • A 115 GHz monolithic GaAs FET oscillator
    • Monterey, CA, November
    • Tserng, H. Q., Kim, B.: ‘A 115 GHz monolithic GaAs FET oscillator’. IEEE, GaAs IC Symp, Monterey, CA, November, 1985, pp. 11-13
    • (1985) IEEE, GaAs IC Symp , pp. 11-13
    • Tserng, H.Q.1    Kim, B.2
  • 4
    • 0020904275 scopus 로고
    • Monolithic microwave amplifier using a two-dimensional electron GaAs FET-comparison with GaAs
    • Phoenix, AZ, October
    • Lebrun, M., Jay, P. R., Rumelhard, C., Ray, G., Delecluse, P.: ‘Monolithic microwave amplifier using a two-dimensional electron GaAs FET-comparison with GaAs’. IEEE, GaAs IC Symposium, Phoenix, AZ, October, 1983, pp. 20-23
    • (1983) IEEE, GaAs IC Symposium , pp. 20-23
    • Lebrun, M.1    Jay, P.R.2    Rumelhard, C.3    Ray, G.4    Delecluse, P.5
  • 8
    • 0024751373 scopus 로고
    • Design and experimental characteristics of strained In0.52Al0.48As/InxGa1-xAs (x > 0.53) HEMT's
    • Ng, G. I., Pavlidis, D., Jaffe, M., Singh, J., Chau, H. F.: ‘Design and experimental characteristics of strained In0.52Al0.48As/InxGa1-xAs (x > 0.53) HEMT's’, IEEE. Trans., 1990, ED-36, (9), pp. 2249-2259
    • (1990) IEEE. Trans. , vol.ED-36 , Issue.9 , pp. 2249-2259
    • Ng, G.I.1    Pavlidis, D.2    Jaffe, M.3    Singh, J.4    Chau, H.F.5
  • 9
    • 0025385848 scopus 로고
    • New generation MMIC amplifiers using InGaAs/InAlAs HEMTs
    • Weiss, M., Ng, G. I., Pavlidis, D.: ‘New generation MMIC amplifiers using InGaAs/InAlAs HEMTs’, Electron Lett., 1990, 26, (4), pp. 264-266
    • (1990) Electron Lett. , vol.26 , Issue.4 , pp. 264-266
    • Weiss, M.1    Ng, G.I.2    Pavlidis, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.