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A fully monolithic integrated 60 GHz receiver
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X-band varactor tuned monolithic GaAs oscillators
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A 115 GHz monolithic GaAs FET oscillator
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Monterey, CA, November
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IEEE, GaAs IC Symp
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Tserng, H.Q.1
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0020904275
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Monolithic microwave amplifier using a two-dimensional electron GaAs FET-comparison with GaAs
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Phoenix, AZ, October
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0023249224
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A 2-20 GHz high-gain monolithic HEMT distributed amplifier
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IEEE
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Nishimoto, C., Larue, R., Bandy, S., Day, M., Eckstein, J., Webb, C. Yuen, C., Zdasiuk, G.: ‘A 2-20 GHz high-gain monolithic HEMT distributed amplifier’. IEEE, 1987 MMIC-symp., Conf. Digest, pp. 109-113
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85024198249
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Very high performance 0.15μm gate-length InAlAs/InGaAs/InP lattice matched HEMTs
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12th Biennial IEEE/Cornell University Conf.
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Tessner, A. J., Chao, P. C., Duh, K. H. G., Ho, P., Kao, M. Y., Liu, S. M. J., Smith, P. M., Ballingal, J. M., Jabra, A. A., Yu, T. H.: ‘Very high performance 0.15μm gate-length InAlAs/InGaAs/InP lattice matched HEMTs’. 12th Biennial IEEE/Cornell University Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuits
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Jabra, A.A.9
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0024133213
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Microwave performance of AlInAs/GalnAs HEMTs with 0.2 and 0.1 μm gate length
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Mishra, U. K., Brown, A. S., Rosenbaum, S. E., Hooper, C. E., Pierce, M. W., Delaney, M. J., Vaughn, S., White, K.: ‘Microwave performance of AlInAs/GalnAs HEMTs with 0.2 and 0.1 μm gate length’, IEEE, Electron Device Lett., 1989, EDL-9, pp. 647-649
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8
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0024751373
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Design and experimental characteristics of strained In0.52Al0.48As/InxGa1-xAs (x > 0.53) HEMT's
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0025385848
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New generation MMIC amplifiers using InGaAs/InAlAs HEMTs
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Weiss, M.1
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0025422059
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5-100 GHz InP CPW MMIC 7-section distributed amplifier
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Majidi-Ahy, R., Riaziat, M., Nishmoto, C. Glenn, M., Siverman, S., Weng, S., Pao, Y. C. Zdasiuk, G., Bandy, S., Tan, Z.: ‘5-100 GHz InP CPW MMIC 7-section distributed amplifier’. IEEE, MMIC-symp., Conf. Digest, 1990 pp. 31-34
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Majidi-Ahy, R.1
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11
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0025497312
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W-band monolithic mixer using InAlAs/InGaAs HEMT's
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New Orleans, LA, October
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Kwon, Y., Pavlidis, D., Tutt, M., Ng, G. I., Brock, T.: ‘W-band monolithic mixer using InAlAs/InGaAs HEMT's. IEEE, GaAs IC Symposium, New Orleans, LA, October, 1990
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IEEE, GaAs IC Symposium
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Kwon, Y.1
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