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Volumn 42, Issue 4 B, 2003, Pages 2288-2290
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Experimental consideration of optical band-gap energy of wurtzite InN
a
b
NTT CORPORATION
(Japan)
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Author keywords
Band gap energy; InGaN; InN; MOVPE; Nitride; Optical absorption; Photoluminescence; Raman scattering; X ray diffraction
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Indexed keywords
ENERGY GAP;
GALLIUM NITRIDE;
HIGH ENERGY ELECTRON DIFFRACTION;
LIGHT ABSORPTION;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
RAMAN SCATTERING;
SINGLE CRYSTALS;
X RAY DIFFRACTION ANALYSIS;
OPTICAL BAND GAP ENERGY;
WURTZITE INDIUM NITRIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0038347803
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.2288 Document Type: Article |
Times cited : (26)
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References (13)
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