Experimental consideration of optical band-gap energy of wurtzite InN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2288-2290

  Matsuoka, Takashi ^a   Nakao, Masashi ^b   Okamoto, Hiroshi ^b   Harima, Hiroshi ^c   Kurimoto, Eiji ^d  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Band gap energy; InGaN; InN; MOVPE; Nitride; Optical absorption; Photoluminescence; Raman scattering; X ray diffraction

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

OPTICAL BAND GAP ENERGY; WURTZITE INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0038347803     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2288     Document Type: Article

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