Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 169-174

  Neudeck, P G ^a   Powell, J A ^a   Trunek, A J ^a   Spry, D J ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Cantilevers; CVD; Dislocations; Epitaxial Growth; Etch Pits; Heteroepitaxy; KOH; Mesas; On Axis Epitaxy; SC SiC; Screw Dislocations; Step Free Surface; Web Growth

Indexed keywords

CANTILEVER BEAMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; SURFACE STRUCTURE;

3C-SIC; ETCH PITS; HETEROEPITAXY; KOH; MESAS; ON-AXIS EPITAXY; SCREW DISLOCATIONS; STEP-FREE SURFACES; WEB GROWTH;

SILICON CARBIDE;

EID: 8744252504     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.169     Document Type: Conference Paper

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