Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 261-264

  Kamata, I ^a   Tsuchida, H ^a   Jikimoto, T ^a   Miyanagi, T ^a   Izumi, K ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

4H SiC; Growth Conditions; Micropipe; Micropipe Dissociation

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ETCHING; LIQUID PHASE EPITAXY; PROBABILITY;

MICROPIPES;

SILICON CARBIDE;

EID: 0242581449     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.261     Document Type: Conference Paper

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