Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2391-2400

  Neudeck, Philip G ^a   Powell, J Anthony ^a   Beheim, Glenn M ^a   Benavage, Emye L ^a   Abel, Phillip B ^a   Trunek, Andrew J ^b   Spry, David J ^b   Dudley, Michael ^c   Vetter, William M ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b OHIO AEROSPACE INSTITUTE   (United States)

^c Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; BI-LAYER; CONCAVE CORNERS; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; LATERAL EXPANSION; LATERAL PROPAGATION; MESA PATTERNS; MESA SHAPE; MESA SIDEWALL; MICROPIPES; REACTIVE ION; SIC SUBSTRATES; STEP-FLOW GROWTH; STEP-FREE SURFACE; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHIES; TOP SURFACE;

ATOMIC FORCE MICROSCOPY; NANOCANTILEVERS; OPTICAL MICROSCOPY; OPTIMIZATION;

SILICON CARBIDE;

EID: 0036734007     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497456     Document Type: Article

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