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Volumn 389-393, Issue 1, 2002, Pages 391-394

Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography

(5) Dudley, M a Vetter, W M a Huang, X R a Neudeck, P G b Powell, J A b

a Stony Brook University (United States)

b NASA GLENN RESEARCH CENTER (United States)

Author keywords

3C SiC; Atomically flat mesas; Heteroepitaxial growth; Mismatch strain; Polytype mapping; Screw dislocations; Synchrotron White Beam X ray Topography (SWBXT)

Indexed keywords

DISLOCATIONS (CRYSTALS); EPILAYERS; EPITAXIAL GROWTH; NUCLEATION; SUPERSATURATION; SYNCHROTRONS; TOPOGRAPHY; X RAY ANALYSIS; IMAGE SEGMENTATION; MAPPING; SCREW DISLOCATIONS; SILICON WAFERS;

ATOMICALLY FLAT MESAS; MISMATCH STRAINS; POLYTYPE MAPPING; SCREW DISLOCATIONS; SYNCHROTRON WHITE-BEAM X-RAY TOPOGRAPHY (SWBXT); TOPOGRAPHS; 3C SIC; MISMATCH STRAIN; POLYTYPES; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHIES;

EPITAXIAL FILMS; SILICON CARBIDE;

EID: 0037926047 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.391 Document Type: Article

Times cited : (5)

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