Growth of defect-free 3C-SiC on 4H- and 6H-SiC mesas using step-free surface heteroepitaxy

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 311-314

  Neudeck, Philip G ^a   Powell, J Anthony ^a   Trunek, Andrew J ^b   Huang, Xianrong R ^c   Dudley, Michael ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b OHIO AEROSPACE INSTITUTE   (United States)

^c STONY BROOK UNIVERSITY   (United States)

Author keywords

3C SiC; Cubic polytype; Heteroepitaxy; Lattice mismatch; Nucleation; Pseudomorphic; Stacking faults

Indexed keywords

EPILAYERS; LATTICE MISMATCH; NUCLEATION; SILICON CARBIDE; STACKING FAULTS; THIN FILMS; EPITAXIAL GROWTH; SUBSTRATES;

CUBIC POLYTYPE; PSEUDOMORPHICS; 3C-SIC; BILAYER SURFACE; DOUBLE-POSITIONING BOUNDARIES; IN-PLANE LATTICES; LATERAL EXPANSION; POLYTYPES; PSEUDOMORPHIC; STEP-FREE SURFACE;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 0012381558     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.311     Document Type: Article

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