Homoepitaxial 'Web growth' of SiC to terminate C-axis screw dislocations and enlarge step-free surfaces

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 251-254

  Neudeck, Philip G ^a   Anthony Powell, J ^a   Trunek, Andrew ^b   Spry, David ^b   Beheim, Glenn M ^a   Benavage, Emye ^a   Abel, Phillip ^a   Vetter, William M ^c   Dudley, Michael ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b OHIO AEROSPACE INSTITUTE   (United States)

^c STONY BROOK UNIVERSITY   (United States)

Author keywords

AFM; Cantilever; CVD; Homoepitaxial growth; Step free surfaces; SWBXT; Web growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); SILICON CARBIDE; CRYSTALLOGRAPHY; MICROMETERS; NANOCANTILEVERS; SCREW DISLOCATIONS; SCREWS;

HOMOEPITAXIAL GROWTH; STEP-FREE SURFACES; WEB GROWTH; 4H-SIC SUBSTRATE; CANTILEVER; ELECTRICAL DEVICES; HOMOEPITAXIAL; MESA SIDEWALL; STEP-FREE SURFACE; SWBXT;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 4243840440     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.251     Document Type: Article

References (6)

1. J. A. Powell, et. al.: Appl. Phys. Lett. Vol. 77 (2000), p. 1449
2. H. Matsunami, et. al.: Springer Proc. Physics Vol. 34 (Springer-Verlag, Berlin 1989), p. 34
3. S. Tanaka, R. Kern, and R. Davis: Appl. Phys. Lett. Vol. 66 (1995), p. 37
4. M. Dudley and X. Huang: Mat. Sci. Forum Vol. 338 (Trans Tech, Switzerland 2000), p. 533
5. Scanning Probe Microscopy Notebook, Rev. 3.0 (Digital Instruments, Santa Barbara 1998), p. 52
6. M. Dudley, W. Vetter, and P. Neudeck, submitted to J. Crystal Growth (2001)