Electrical characteristics of thermally evaporated HfO2

Journal of the Electrochemical Society

Volumn 151, Issue 10, 2004, Pages

  Garg, R ^a   Chowdhury, N A ^a   Bhaskaran, M ^b   Swain, P K ^b   Misra, D ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; EVAPORATION; FILM GROWTH; LEAKAGE CURRENTS; MOS CAPACITORS; PARTIAL PRESSURE; PERMITTIVITY;

CAPACITANCE-VOLTAGE TECHNIQUE; HAFNIUM OXIDE (HFO2); THERMAL EVAPORATION;

HAFNIUM COMPOUNDS;

EID: 8644271693     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1784212     Document Type: Article

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