Electrical characteristics of novel hafnium oxide film

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn 2002-January, Issue , 2002, Pages 51-54

  Ng, K L ^a   Zhan, N ^a   Poon, M C ^a   Kok, C W ^a   Chan, M ^a   Wong, H ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Annealing; Dielectric materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables; Hafnium oxide; Silicon; Sputtering; Voltage

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON DEVICES; FILMS; HAFNIUM; HAFNIUM OXIDES; INTERFACES (MATERIALS); OXIDE FILMS; OXIDES; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS;

CAPACITANCE VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC MEASUREMENTS; DIELECTRIC SUBSTRATES; DIELECTRIC THIN FILMS; ELECTRIC VARIABLES; ELECTRICAL CHARACTERISTIC; SILICON SUBSTRATES;

DIELECTRIC MATERIALS;

EID: 84948756868     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HKEDM.2002.1029155     Document Type: Conference Paper

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