Support-free transfer of ultrasmooth graphene films facilitated by self-Assembled monolayers for electronic devices and patterns

ACS Nano

Volumn 10, Issue 1, 2016, Pages 1404-1410

  Wang, Bin ^a   Huang, Ming ^a,b   Tao, Li ^d   Lee, Sun Hwa ^a   Jang, A Rang ^b   Li, Bao Wen ^a   Shin, Hyeon Suk ^c   Akinwande, Deji ^d   Ruoff, Rodney S ^a,b,c  

^a Institute for Basic Science   (South Korea)

^b Yeungnam University   (South Korea)

^c Ulsan National Institute of Science and Technology   (South Korea)

^d The University of Texas at Austin   (United States)

Author keywords

Gfet; Graphene; Pattern; Self Assembled monolayer; Support free; Transfer; Ultrasmooth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; CRACKS; FIELD EFFECT TRANSISTORS; FLUORINE; GRAPHENE; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; MONOLAYERS; ORGANIC POLYMERS; PLASTIC BOTTLES; SILICON OXIDES; SILICON WAFERS;

FIELD-EFFECT MOBILITIES; GFET; LARGE-AREA GRAPHENE; PATTERN; POLYETHYLENE-TEREPHTHALATE FILMS; RESISTANCE MODULATION; TRANSFER; ULTRASMOOTH;

SELF ASSEMBLED MONOLAYERS;

EID: 84989950296     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b06842     Document Type: Article

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