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The Supplementary Information of Petrone et al. (6) contains a table with transport data for several CVD-grown graphene devices on SiO2 and hBN. The values for the mobility given there were extracted using the same method used for our samples, and were obtained same temperature. For each sample, the disorder-induced charge carrier fluctuations n* can be estimated from the FWHM of the Dirac peak, ∆WCNP, following Dean et al. (35
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CNP, following Dean et al. (35).
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