-
1
-
-
67649225738
-
Graphene: Status and Prospects
-
Geim, A. K. Graphene: Status and Prospects Science 2009, 324, 1530-1534
-
(2009)
Science
, vol.324
, pp. 1530-1534
-
-
Geim, A.K.1
-
2
-
-
27744534165
-
Two-dimensional gas of massless Dirac fermions in graphene
-
DOI 10.1038/nature04233, PII N04233
-
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200 (Pubitemid 41599867)
-
(2005)
Nature
, vol.438
, Issue.7065
, pp. 197-200
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Katsnelson, M.I.5
Grigorieva, I.V.6
Dubonos, S.V.7
Firsov, A.A.8
-
3
-
-
59949098337
-
The Electronic Properties of Graphene
-
Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. The Electronic Properties of Graphene Rev. Mod. Phys. 2009, 81, 109-162
-
(2009)
Rev. Mod. Phys.
, vol.81
, pp. 109-162
-
-
Castro Neto, A.H.1
Guinea, F.2
Peres, N.M.R.3
Novoselov, K.S.4
Geim, A.K.5
-
4
-
-
77956280459
-
Graphene Photonics and Optoelectronics
-
Bonaccorso, F.; Sun, Z.; Hasan, T.; Ferrari, A. C. Graphene Photonics and Optoelectronics Nat. Photonics 2010, 4, 611-622
-
(2010)
Nat. Photonics
, vol.4
, pp. 611-622
-
-
Bonaccorso, F.1
Sun, Z.2
Hasan, T.3
Ferrari, A.C.4
-
5
-
-
65449143255
-
Gate-Controlled Non-volatile Graphene-Ferroelectric Memory
-
Zheng, Y.; Ni, G. X.; Toh, C. T.; Zeng, M. G.; Chen, S. T.; Yao, K.; Özyilmaz, B. Gate-Controlled Non-volatile Graphene-Ferroelectric Memory Appl. Phys. Lett. 2009, 94, 163505
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 163505
-
-
Zheng, Y.1
Ni, G.X.2
Toh, C.T.3
Zeng, M.G.4
Chen, S.T.5
Yao, K.6
Özyilmaz, B.7
-
6
-
-
66749119012
-
Large-Area Synthesis of High-Quality and Uniform Graphene Flms on Copper Foils
-
Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. et al. Large-Area Synthesis of High-Quality and Uniform Graphene Flms on Copper Foils Science 2009, 324, 1312-1314
-
(2009)
Science
, vol.324
, pp. 1312-1314
-
-
Li, X.1
Cai, W.2
An, J.3
Kim, S.4
Nah, J.5
Yang, D.6
Piner, R.7
Velamakanni, A.8
Jung, I.9
Tutuc, E.10
-
7
-
-
77956430820
-
Roll-to-Roll Production of 30-Inch Graphene Fims for Transparent Electrodes
-
Bae, S.; Kim, H.; Lee, Y.; Xu, X.; Park, J. S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. et al. Roll-to-Roll Production of 30-Inch Graphene Fims for Transparent Electrodes Nat. Nanotechnol. 2010, 5, 574-578
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 574-578
-
-
Bae, S.1
Kim, H.2
Lee, Y.3
Xu, X.4
Park, J.S.5
Zheng, Y.6
Balakrishnan, J.7
Lei, T.8
Kim, H.R.9
Song, Y.10
-
8
-
-
78449281451
-
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
-
Lee, S.; Lee, K.; Zhong, Z. H. Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition Nano Lett. 2010, 10, 4702-4707
-
(2010)
Nano Lett.
, vol.10
, pp. 4702-4707
-
-
Lee, S.1
Lee, K.2
Zhong, Z.H.3
-
9
-
-
77957906580
-
Graphene Field Effect Transistors with Ferroelectric Gating
-
Zheng, Y.; Ni, G. X.; Toh, C. T.; Tan, C. Y.; Yao, K; Özyilmaz, B. Graphene Field Effect Transistors with Ferroelectric Gating Phys. Rev. Lett. 2010, 105, 166602
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 166602
-
-
Zheng, Y.1
Ni, G.X.2
Toh, C.T.3
Tan, C.Y.4
Yao, K.5
Özyilmaz, B.6
-
10
-
-
79952613386
-
Wafer-Scale Graphene/Ferroelectric Hybrid Devices for Low-Voltage Electronics
-
Zheng, Y.; Ni, G. X.; Bae, S.; Cong, C. X.; Kahya, O.; Toh, C. T.; Kim, H. R.; Im, D.; Yu, T.; Ahn, J. H. et al. Wafer-Scale Graphene/Ferroelectric Hybrid Devices for Low-Voltage Electronics Europhys. Lett. 2011, 93, 17002
-
(2011)
Europhys. Lett.
, vol.93
, pp. 17002
-
-
Zheng, Y.1
Ni, G.X.2
Bae, S.3
Cong, C.X.4
Kahya, O.5
Toh, C.T.6
Kim, H.R.7
Im, D.8
Yu, T.9
Ahn, J.H.10
-
11
-
-
77957908617
-
Boron Nitride Substrates for High Quality Graphene Electronics
-
Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron Nitride Substrates for High Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 722-726
-
-
Dean, C.R.1
Young, A.F.2
Meric, I.3
Lee, C.4
Wang, L.5
Sorgenfrei, S.6
Watanabe, K.7
Taniguchi, T.8
Kim, P.9
Shepard, K.L.10
-
12
-
-
79960570509
-
Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene
-
Gannett, W.; Regan, W.; Watanabe, K.; Taniguchi, T.; Crommie, M. F.; Zettl, A. Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene Appl. Phys. Lett. 2011, 98, 242105
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 242105
-
-
Gannett, W.1
Regan, W.2
Watanabe, K.3
Taniguchi, T.4
Crommie, M.F.5
Zettl, A.6
-
13
-
-
68649099010
-
Strain Engineering of Graphene's Electronic Structure
-
Pereira, V. M.; Castro Neto, A. H. Strain Engineering of Graphene's Electronic Structure Phys. Rev. Lett. 2009, 103, 046801
-
(2009)
Phys. Rev. Lett.
, vol.103
, pp. 046801
-
-
Pereira, V.M.1
Castro Neto, A.H.2
-
14
-
-
79961103139
-
Gaps Tunable by Gates in Strained Graphene
-
Low, T.; Guinea, F.; Katsnelson, M. I. Gaps Tunable by Gates in Strained Graphene Phys. Rev. B 2011, 83, 195436
-
(2011)
Phys. Rev. B
, vol.83
, pp. 195436
-
-
Low, T.1
Guinea, F.2
Katsnelson, M.I.3
-
15
-
-
60749107706
-
Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition
-
Reina, A.; Jia, X. T.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Lett. 2009, 9, 30-35
-
(2009)
Nano Lett.
, vol.9
, pp. 30-35
-
-
Reina, A.1
Jia, X.T.2
Ho, J.3
Nezich, D.4
Son, H.5
Bulovic, V.6
Dresselhaus, M.S.7
Kong, J.8
-
16
-
-
59649099717
-
Large-Scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes
-
Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J. H.; Kim, P.; Choi, J. Y.; Hong, B. H. et al. Large-Scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes Nature 2009, 457, 706-710
-
(2009)
Nature
, vol.457
, pp. 706-710
-
-
Kim, K.S.1
Zhao, Y.2
Jang, H.3
Lee, S.Y.4
Kim, J.M.5
Kim, K.S.6
Ahn, J.H.7
Kim, P.8
Choi, J.Y.9
Hong, B.H.10
-
17
-
-
79951527594
-
Continuity of Graphene on Polycrystalline Copper
-
Rasool, H. I.; Song, E. B.; Allen, M. J.; Wassei, J. K.; Kaner, R. B.; Wang, K. L.; Weiller, B. H.; Gimzewski, J. K. Continuity of Graphene on Polycrystalline Copper Nano Lett. 2011, 11, 251-256
-
(2011)
Nano Lett.
, vol.11
, pp. 251-256
-
-
Rasool, H.I.1
Song, E.B.2
Allen, M.J.3
Wassei, J.K.4
Kaner, R.B.5
Wang, K.L.6
Weiller, B.H.7
Gimzewski, J.K.8
-
18
-
-
79952257832
-
Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
-
Li, X. S.; Magnuson, C. W.; Venugopal, A.; Tromp, R. M.; Hannon, J. B.; Vogel, E. M.; Colombo, L.; Ruoff, R. S. Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper J. Am. Chem. Soc. 2011, 133, 2816-2819
-
(2011)
J. Am. Chem. Soc.
, vol.133
, pp. 2816-2819
-
-
Li, X.S.1
Magnuson, C.W.2
Venugopal, A.3
Tromp, R.M.4
Hannon, J.B.5
Vogel, E.M.6
Colombo, L.7
Ruoff, R.S.8
-
19
-
-
78449300420
-
Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process
-
Li, X. S.; Magnuson, C. W.; Venugopal, A.; An, J.; Suk, J. W.; Han, B.; Borysiak, M.; Cai, W.; Velamakanni, A.; Zhu, Y. et al. Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process Nano Lett. 2010, 10, 4328-4334
-
(2010)
Nano Lett.
, vol.10
, pp. 4328-4334
-
-
Li, X.S.1
Magnuson, C.W.2
Venugopal, A.3
An, J.4
Suk, J.W.5
Han, B.6
Borysiak, M.7
Cai, W.8
Velamakanni, A.9
Zhu, Y.10
-
20
-
-
78650114107
-
Graphene Islands on Cu Foils: The Interplay between Shape, Orientation, and Defects
-
Wofford, J. M.; Nie, S.; McCarty, K. F.; Bartelt, N. C.; Dubon, O. D. Graphene Islands on Cu Foils: The Interplay between Shape, Orientation, and Defects Nano Lett. 2010, 10, 4890-4896
-
(2010)
Nano Lett.
, vol.10
, pp. 4890-4896
-
-
Wofford, J.M.1
Nie, S.2
McCarty, K.F.3
Bartelt, N.C.4
Dubon, O.D.5
-
21
-
-
80051487167
-
Defect-like Structures of Graphene on Copper Foils for Strain Relief Investigated by High Resolution Scanning Tunneling Microscopy
-
Zhang, Y. F.; Teng, G.; Gao, Y. B.; Xie, S. B.; Ji, Q. Q.; Yan, K.; Peng, H. L.; Liu, Z. F. Defect-like Structures of Graphene on Copper Foils for Strain Relief Investigated by High Resolution Scanning Tunneling Microscopy ACS Nano 2011, 5, 4014-4022
-
(2011)
ACS Nano
, vol.5
, pp. 4014-4022
-
-
Zhang, Y.F.1
Teng, G.2
Gao, Y.B.3
Xie, S.B.4
Ji, Q.Q.5
Yan, K.6
Peng, H.L.7
Liu, Z.F.8
-
22
-
-
79957494809
-
Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapour Deposition
-
Yu, Q. K.; Jauregui, L. A.; Wu, W.; Colby, R.; Tian, J.; Su, Z.; Cao, H.; Liu, Z.; Pandey, D.; Wei, D. et al. Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapour Deposition Nat. Mater. 2011, 10, 443-449
-
(2011)
Nat. Mater.
, vol.10
, pp. 443-449
-
-
Yu, Q.K.1
Jauregui, L.A.2
Wu, W.3
Colby, R.4
Tian, J.5
Su, Z.6
Cao, H.7
Liu, Z.8
Pandey, D.9
Wei, D.10
-
23
-
-
77952259696
-
An Extended Defect in Graphene as a Metallic Wire
-
Lahiri, J.; Lin, Y.; Bozkurt, P.; Oleynik, I. I.; Batzill, M. An Extended Defect in Graphene as a Metallic Wire Nat. Nanotechnol. 2010, 5, 326-329
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 326-329
-
-
Lahiri, J.1
Lin, Y.2
Bozkurt, P.3
Oleynik, I.I.4
Batzill, M.5
-
24
-
-
40749140712
-
Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
-
Morozov, S. V.; Novoselov, K. S.; Katsnelson, M. I.; Schedin, F.; Elias, D. C.; Jaszczak, J. A.; Geim, A. K. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer Phys. Rev. Lett. 2008, 100, 016602
-
(2008)
Phys. Rev. Lett.
, vol.100
, pp. 016602
-
-
Morozov, S.V.1
Novoselov, K.S.2
Katsnelson, M.I.3
Schedin, F.4
Elias, D.C.5
Jaszczak, J.A.6
Geim, A.K.7
-
25
-
-
79961191870
-
Temperature Dependent Resistivity in Bilayer Graphene Due to Flexural Phonons
-
Ochoa, H.; Castro, E. V.; Katsnelson, M. I.; Guinea, F. Temperature Dependent Resistivity in Bilayer Graphene Due to Flexural Phonons Phys. Rev. B 2011, 83, 235416
-
(2011)
Phys. Rev. B
, vol.83
, pp. 235416
-
-
Ochoa, H.1
Castro, E.V.2
Katsnelson, M.I.3
Guinea, F.4
-
27
-
-
41849125958
-
2
-
DOI 10.1038/nnano.2008.58, PII NNANO200858
-
2 Nat. Nanotechnol. 2008, 3, 206-209 (Pubitemid 351499398)
-
(2008)
Nature Nanotechnology
, vol.3
, Issue.4
, pp. 206-209
-
-
Chen, J.-H.1
Jang, C.2
Xiao, S.3
Ishigami, M.4
Fuhrer, M.S.5
-
28
-
-
79961102249
-
Pinning of a Two-Dimensional Membrane on Top of a Patterned Substrate: The Case of Graphene
-
Kusminskiy, V. S.; Campbell, D. K.; Castro Neto, A. H.; Guinea, F. Pinning of a Two-Dimensional Membrane on Top of a Patterned Substrate: The Case of Graphene Phys. Rev. B 2011, 83, 165405
-
(2011)
Phys. Rev. B
, vol.83
, pp. 165405
-
-
Kusminskiy, V.S.1
Campbell, D.K.2
Castro Neto, A.H.3
Guinea, F.4
-
29
-
-
40749102633
-
Electron scattering on microscopic corrugations in graphene
-
DOI 10.1098/rsta.2007.2157
-
Katsnelson, M. I.; Geim, A. K. Electron Scattering on Microscopic Corrugations in Graphene Philos. Trans. R. Soc., A 2008, 366, 195-204 (Pubitemid 351396366)
-
(2008)
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
, vol.366
, Issue.1863
, pp. 195-204
-
-
Katsnelson, M.I.1
Geim, A.K.2
-
30
-
-
78650444412
-
Limits on Charge Carrier Mobility in Suspended Graphene Due to Flexural Phonons
-
Castro, E. V.; Ochoa, H.; Katsnelson, M. I.; Gorbachev, R. V.; Elias, D. C.; Novoselov, K. S.; Geim, A. K.; Guinea, F. Limits on Charge Carrier Mobility in Suspended Graphene Due to Flexural Phonons Phys. Rev. Lett. 2010, 105, 266601
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 266601
-
-
Castro, E.V.1
Ochoa, H.2
Katsnelson, M.I.3
Gorbachev, R.V.4
Elias, D.C.5
Novoselov, K.S.6
Geim, A.K.7
Guinea, F.8
-
31
-
-
78649732785
-
Temperature-Dependent Resistivity of Suspended Graphene
-
Mariani, E.; Oppen, F. V. Temperature-Dependent Resistivity of Suspended Graphene Phys. Rev. B 2010, 82, 195403
-
(2010)
Phys. Rev. B
, vol.82
, pp. 195403
-
-
Mariani, E.1
Oppen, F.V.2
-
32
-
-
79958830526
-
Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
-
Mayorov, A. S.; Gorbachev, R. V.; Morozov, S. V.; Britnell, L.; Jalil, R.; Ponomarenko, L. A.; Blake, P.; Novoselov, K. S.; Watanabe, K.; Taniguchi, T. et al. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature Nano Lett. 2011, 11, 2396-2399
-
(2011)
Nano Lett.
, vol.11
, pp. 2396-2399
-
-
Mayorov, A.S.1
Gorbachev, R.V.2
Morozov, S.V.3
Britnell, L.4
Jalil, R.5
Ponomarenko, L.A.6
Blake, P.7
Novoselov, K.S.8
Watanabe, K.9
Taniguchi, T.10
-
33
-
-
59149091893
-
Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
-
Elias, D. C.; Nair, R. R.; Mohiuddin, T. M. G.; Morozov, S. V.; Blake, P.; Halsall, M. P.; Ferrari, A. C.; Boukhvalov, D. W.; Katsnelson, M. I.; Geim, A. K. et al. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane Science 2009, 323, 610-613
-
(2009)
Science
, vol.323
, pp. 610-613
-
-
Elias, D.C.1
Nair, R.R.2
Mohiuddin, T.M.G.3
Morozov, S.V.4
Blake, P.5
Halsall, M.P.6
Ferrari, A.C.7
Boukhvalov, D.W.8
Katsnelson, M.I.9
Geim, A.K.10
-
34
-
-
79958792906
-
Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices
-
Avsar, A.; Yang, T. Y.; Bae, S.; Balakrishnan, J.; Volmer, F.; Jaiswal, M.; Zheng, Y.; Ali, S. R.; Guntherodt, G.; Hong, B. H. et al. Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices Nano Lett. 2011, 11, 2363-2368
-
(2011)
Nano Lett.
, vol.11
, pp. 2363-2368
-
-
Avsar, A.1
Yang, T.Y.2
Bae, S.3
Balakrishnan, J.4
Volmer, F.5
Jaiswal, M.6
Zheng, Y.7
Ali, S.R.8
Guntherodt, G.9
Hong, B.H.10
-
35
-
-
72849122590
-
Tuning the Graphene Work Function by Electric Field Effect
-
Yu, Y. J.; Zhao, Y.; Ryu, S.; Brus, L. E.; Kim, K.; Kim, P. Tuning the Graphene Work Function by Electric Field Effect Nano Lett. 2009, 9, 3430-3434
-
(2009)
Nano Lett.
, vol.9
, pp. 3430-3434
-
-
Yu, Y.J.1
Zhao, Y.2
Ryu, S.3
Brus, L.E.4
Kim, K.5
Kim, P.6
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