Photoluminescence enhancement and structure repairing of monolayer MoSe2 by hydrohalic acid treatment

ACS Nano

Volumn 10, Issue 1, 2016, Pages 1454-1461

  Han, Hau Vei ^a,b   Lu, Ang Yu ^a   Lu, Li Syuan ^c   Huang, Jing Kai ^a   Li, Henan ^a   Hsu, Chang Lung ^e   Lin, Yung Chang ^f   Chiu, Ming Hui ^a   Suenaga, Kazu ^f   Chu, Chih Wei ^e   Kuo, Hao Chung ^a   Chang, Wen Hao ^d   Li, Lain Jong ^a   Shi, Yumeng ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b Institute of Electro Optical Engineering   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d Taiwan Consortium of Emergent Crystalline Materials (TCECM) Ministry of Science and Technology   (Taiwan)

^e RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^f NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Layered materials; Molybdenum diselenide; Photoluminescence; Transition metal dichalcogenides; Two dimensional materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; EXCITONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOLAYERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; ORGANIC POLYMERS; PHOTOLUMINESCENCE; POINT DEFECTS; SELENIUM COMPOUNDS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL VAPOR DEPOSITION METHODS; ELECTRONIC AND OPTICAL PROPERTIES; LAYERED MATERIAL; MOLYBDENUM DISELENIDE; PHOTOLUMINESCENCE ENHANCEMENT; PHOTOLUMINESCENCE INTENSITIES; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL MATERIALS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84989908671     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b06960     Document Type: Article

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