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Volumn 3, Issue 40, 2013, Pages 18424-18429

Effect of sulphur vacancy on geometric and electronic structure of MoS 2 induced by molecular hydrogen treatment at room temperature

(13) Kim, Byung Hoon a,b Park, Min c Lee, Minoh a Baek, Seung Jae c Jeong, Hu Young a Choi, Min a Chang, Sung Jin d Hong, Won G d Kim, Tae Kyung a Moon, Hoi Ri a Park, Yung Woo c Park, Noejung a Jun, Yongseok e

a Ulsan National Institute of Science and Technology (South Korea)

b SolarLight Ltd (South Korea)

c Seoul National University (South Korea)

d Korea Basic Science Institute (KBSI) (South Korea)

e Konkuk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CO-ORDINATIVELY UNSATURATED; ELECTRICAL TRANSPORT PROPERTIES; FIRST-PRINCIPLES CALCULATION; HYDRODESULPHURISATION; LOW TEMPERATURES; MOLECULAR HYDROGEN; MOLYBDENUM DISULPHIDE; ROOM TEMPERATURE;

CALCULATIONS; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDRODESULFURIZATION; INDUSTRIAL APPLICATIONS; MOLECULAR PHYSICS; MOLYBDENUM COMPOUNDS; RAMAN SPECTROSCOPY; TEMPERATURE; TRANSPORT PROPERTIES; VACANCIES;

SULFUR;

EID: 84884860642 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra42072h Document Type: Article

Times cited : (52)

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