Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode

ACS Nano

Volumn 9, Issue 8, 2015, Pages 8368-8375

  Chen, Liang ^a   Liu, Bilu ^a   Ge, Mingyuan ^a   Ma, Yuqiang ^a   Abbas, Ahmad N ^a   Zhou, Chongwu ^a  

^a University of Southern California   (United States)

Author keywords

aligned growth; chemical vapor deposition; layer over layer; sapphire; TMDCs; transition metal dichalcogenides; tungsten diselenides

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FILM GROWTH; GRAIN BOUNDARIES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; NUCLEATION; SAPPHIRE; SELENIUM COMPOUNDS; SUBSTRATES; SULFUR COMPOUNDS; TRANSITION METALS;

ALIGNED GROWTH; DISELENIDES; LAYER-OVER-LAYER; TMDCS; TRANSITION METAL DICHALCOGENIDES;

TUNGSTEN COMPOUNDS;

EID: 84940121654     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b03043     Document Type: Article

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