Lateral black phosphorene P-N junctions formed via chemical doping for high performance near-infrared photodetector

Nano Energy

Volumn 25, Issue , 2016, Pages 34-41

  Yu, Xuechao ^a   Zhang, Shengli ^b   Zeng, Haibo ^b   Wang, Qi Jie ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Chemical doping; Few layer black phosphorene; P N junction; Photodetector; Solar cells

Indexed keywords

EFFICIENCY; ENERGY GAP; INFRARED DEVICES; INFRARED LASERS; PHOTODETECTORS; PHOTONS; QUANTUM EFFICIENCY; SOLAR CELLS;

CHEMICAL DOPING; EXTERNAL QUANTUM EFFICIENCY; FEW-LAYER BLACK PHOSPHORENE; HIGH CARRIER MOBILITY; HIGH QUANTUM EFFICIENCY; NEAR INFRARED PHOTODETECTORS; P-N JUNCTION; TWO-DIMENSIONAL MATERIALS;

SEMICONDUCTOR JUNCTIONS;

EID: 84964430210     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2016.04.030     Document Type: Article

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