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Applied Physics Letters

Volumn 106, Issue 12, 2015, Pages

Full-range electrical characteristics of WS2 transistors

(5) Kumar, Jatinder a Kuroda, Marcelo A b Bellus, Matthew Z a Han, Shu Jen c Chiu, Hsin Ying a

a UNIVERSITY OF KANSAS (United States)

b AUBURN UNIVERSITY (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; INTERFACES (MATERIALS); SINGLE CRYSTALS;

BULK SINGLE CRYSTALS; CRYSTALLINE QUALITY; ELECTRICAL CHARACTERISTIC; INTERFACE TRAP DENSITY; QUANTUM CAPACITANCE; SUBTHRESHOLD SWING; THEORETICAL LIMITS; TRANSFER CHARACTERISTICS;

INTERFACE STATES;

EID: 84961289822 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4916403 Document Type: Article

Times cited : (62)

References (32)

1
- 77953636772
- E. Pop, Nano Res. 3, 147 (2010). 10.1007/s12274-010-1019-z
- (2010) Nano Res. , vol.3 , pp. 147
- Pop, E.¹

2
- 84869074729
- Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
- (2012) Nat. Nanotechnol. , vol.7 , pp. 699
- Wang, Q.H.¹ Kalantar-Zadeh, K.² Kis, A.³ Coleman, J.N.⁴ Strano, M.S.⁵

3
- 84876539655
- S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, ACS Nano 7, 2898 (2013). 10.1021/nn400280c
- (2013) ACS Nano , vol.7 , pp. 2898
- Butler, S.Z.¹ Hollen, S.M.² Cao, L.³ Cui, Y.⁴ Gupta, J.A.⁵ Gutiérrez, H.R.⁶ Heinz, T.F.⁷ Hong, S.S.⁸ Huang, J.⁹ Ismach, A.F.¹⁰ Johnston-Halperin, E.¹¹ Kuno, M.¹² Plashnitsa, V.V.¹³ Robinson, R.D.¹⁴ Ruoff, R.S.¹⁵ Salahuddin, S.¹⁶ Shan, J.¹⁷ Shi, L.¹⁸ Spencer, M.G.¹⁹ Terrones, M.²⁰ Windl, W.²¹ Goldberger, J.E.²² more..

4
- 79961237848
- A. Kuc, N. Zibouche, and T. Heine, Phys. Rev. B 83, 245213 (2011). 10.1103/PhysRevB.83.245213
- (2011) Phys. Rev. B , vol.83
- Kuc, A.¹ Zibouche, N.² Heine, T.³

5
- 84875413255
- M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, Nat. Chem. 5, 263 (2013). 10.1038/nchem.1589
- (2013) Nat. Chem. , vol.5 , pp. 263
- Chhowalla, M.¹ Shin, H.S.² Eda, G.³ Li, L.-J.⁴ Loh, K.P.⁵ Zhang, H.⁶

6
- 84866379080
- S. J. Haigh, A. Gholinia, R. Jalil, S. Romani, L. Britnell, D. C. Elias, K. S. Novoselov, L. A. Ponomarenko, A. K. Geim, and R. Gorbachev, Nat. Mater. 11, 764 (2012). 10.1038/nmat3386
- (2012) Nat. Mater. , vol.11 , pp. 764
- Haigh, S.J.¹ Gholinia, A.² Jalil, R.³ Romani, S.⁴ Britnell, L.⁵ Elias, D.C.⁶ Novoselov, K.S.⁷ Ponomarenko, L.A.⁸ Geim, A.K.⁹ Gorbachev, R.¹⁰

7
- 2542481867
- V. Podzorov, M. E. Gershenson, C. Kloc, R. Zeis, and E. Bucher, Appl. Phys. Lett. 84, 3301 (2004). 10.1063/1.1723695
- (2004) Appl. Phys. Lett. , vol.84 , pp. 3301
- Podzorov, V.¹ Gershenson, M.E.² Kloc, C.³ Zeis, R.⁴ Bucher, E.⁵

8
- 84878942676
- L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, Science 340, 1311 (2013). 10.1126/science.1235547
- (2013) Science , vol.340 , pp. 1311
- Britnell, L.¹ Ribeiro, R.M.² Eckmann, A.³ Jalil, R.⁴ Belle, B.D.⁵ Mishchenko, A.⁶ Kim, Y.J.⁷ Gorbachev, R.V.⁸ Georgiou, T.⁹ Morozov, S.V.¹⁰ Grigorenko, A.N.¹¹ Geim, A.K.¹² Casiraghi, C.¹³ Neto, A.H.C.¹⁴ Novoselov, K.S.¹⁵

9
- 84879650910
- J. Yoon, W. Park, G. Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W. K. Hong, and B. H. Lee, Small 9 (19), 3295 (2013). 10.1002/smll.201300134
- (2013) Small , vol.9 , Issue.19 , pp. 3295
- Yoon, J.¹ Park, W.² Bae, G.Y.³ Kim, Y.⁴ Jang, H.S.⁵ Hyun, Y.⁶ Lim, S.K.⁷ Kahng, Y.H.⁸ Hong, W.K.⁹ Lee, B.H.¹⁰

10
- 79952406873
- B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
- (2011) Nat. Nanotechnol. , vol.6 , pp. 147
- Radisavljevic, B.¹ Radenovic, A.² Brivio, J.³ Giacometti, V.⁴ Kis, A.⁵

11
- 84872115141
- S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013). 10.1021/nl303583v
- (2013) Nano Lett. , vol.13 , pp. 100
- Das, S.¹ Chen, H.-Y.² Penumatcha, A.V.³ Appenzeller, J.⁴

12
- 85006059522
- Y. Du, L. Yang, H. Liu, and P. D. Ye, APL Mater. 2, 092510 (2014). 10.1063/1.4894198
- (2014) APL Mater. , vol.2
- Du, Y.¹ Yang, L.² Liu, H.³ Ye, P.D.⁴

13
- 84880179070
- S. Das and J. Appenzeller, Nano Lett. 13, 3396 (2013). 10.1021/nl401831u
- (2013) Nano Lett. , vol.13 , pp. 3396
- Das, S.¹ Appenzeller, J.²

14
- 84867464267
- D. Braga, I. Gutiérrez Lezama, H. Berger, and A. F. Morpurgo, Nano Lett. 12, 5218 (2012). 10.1021/nl302389d
- (2012) Nano Lett. , vol.12 , pp. 5218
- Braga, D.¹ Gutiérrez Lezama, I.² Berger, H.³ Morpurgo, A.F.⁴

15
- 80052090759
- L. Liu, S. Bala Kumar, Y. Ouyang, and J. Guo, IEEE Trans. Electron Devices 58, 3042 (2011). 10.1109/TED.2011.2159221
- (2011) IEEE Trans. Electron Devices , vol.58 , pp. 3042
- Liu, L.¹ Bala Kumar, S.² Ouyang, Y.³ Guo, J.⁴

16
- 84881566687
- H. R. Gutiérrez, N. Perea-López, A. L. Elías, A. Berkdemir, B. Wang, R. Lv, F. López-Urías, V. H. Crespi, H. Terrones, and M. Terrones, Nano Lett. 13, 3447 (2013). 10.1021/nl3026357
- (2013) Nano Lett. , vol.13 , pp. 3447
- Gutiérrez, H.R.¹ Perea-López, N.² Elías, A.L.³ Berkdemir, A.⁴ Wang, B.⁵ Lv, R.⁶ López-Urías, F.⁷ Crespi, V.H.⁸ Terrones, H.⁹ Terrones, M.¹⁰

17
- 84886998594
- Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, ACS Nano 7, 8963 (2013). 10.1021/nn403454e
- (2013) ACS Nano , vol.7 , pp. 8963
- Zhang, Y.¹ Zhang, Y.² Ji, Q.³ Ju, J.⁴ Yuan, H.⁵ Shi, J.⁶ Gao, T.⁷ Ma, D.⁸ Liu, M.⁹ Chen, Y.¹⁰ Song, X.¹¹ Hwang, H.Y.¹² Cui, Y.¹³ Liu, Z.¹⁴

18
- 84860329324
- Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, Adv. Mater. 24, 2320 (2012). 10.1002/adma.201104798
- (2012) Adv. Mater. , vol.24 , pp. 2320
- Lee, Y.-H.¹ Zhang, X.-Q.² Zhang, W.³ Chang, M.-T.⁴ Lin, C.-T.⁵ Chang, K.-D.⁶ Yu, Y.-C.⁷ Wang, J.T.-W.⁸ Chang, C.-S.⁹ Li, L.-J.¹⁰ Lin, T.-W.¹¹

19
- 84961308838
- See supplementary material at http://dx.doi.org/10.1063/1.4916403 E-APPLAB-106-045513 for details on experimental methods and derivations.
- See Supplementary Material at E-APPLAB-106-045513 for Details on Experimental Methods and Derivations.

20
- 84906674337
- D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, ACS Nano 8, 8174 (2014). 10.1021/nn502362b
- (2014) ACS Nano , vol.8 , pp. 8174
- Ovchinnikov, D.¹ Allain, A.² Huang, Y.-S.³ Dumcenco, D.⁴ Kis, A.⁵

21
- 84899889160
- N. Ubrig, S. Jo, H. Berger, A. F. Morpurgo, and A. B. Kuzmenko, Appl. Phys. Lett. 104, 171112 (2014). 10.1063/1.4872002
- (2014) Appl. Phys. Lett. , vol.104
- Ubrig, N.¹ Jo, S.² Berger, H.³ Morpurgo, A.F.⁴ Kuzmenko, A.B.⁵

22
- 84897989390
- S. Jo, N. Ubrig, H. Berger, A. B. Kuzmenko, and A. F. Morpurgo, Nano Lett. 14, 2019 (2014). 10.1021/nl500171v
- (2014) Nano Lett. , vol.14 , pp. 2019
- Jo, S.¹ Ubrig, N.² Berger, H.³ Kuzmenko, A.B.⁴ Morpurgo, A.F.⁵

23
- 84901020179
- F. Withers, T. H. Bointon, D. C. Hudson, M. F. Craciun, and S. Russo, Sci. Rep. 4, 4967 (2014). 10.1038/srep04967
- (2014) Sci. Rep. , vol.4 , pp. 4967
- Withers, F.¹ Bointon, T.H.² Hudson, D.C.³ Craciun, M.F.⁴ Russo, S.⁵

24
- 84908426111
- X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, ACS Nano 8 (10), 10396 (2014). 10.1021/nn505253p
- (2014) ACS Nano , vol.8 , Issue.10 , pp. 10396
- Liu, X.¹ Hu, J.² Yue, C.³ Della Fera, N.⁴ Ling, Y.⁵ Mao, Z.⁶ Wei, J.⁷

25
- 36549091403
- S. Luryi, App. Phys. Lett. 52, 501 (1988). 10.1063/1.99649
- (1988) App. Phys. Lett. , vol.52 , pp. 501
- Luryi, S.¹

26
- 84881596995
- S.-L. Li, K. Wakabayashi, Y. Xu, S. Nakaharai, K. Komatsu, W.-W. Li, Y.-F. Lin, A. Aparecido-Ferreira, and K. Tsukagoshi, Nano Lett. 13, 3546 (2013). 10.1021/nl4010783
- (2013) Nano Lett. , vol.13 , pp. 3546
- Li, S.-L.¹ Wakabayashi, K.² Xu, Y.³ Nakaharai, S.⁴ Komatsu, K.⁵ Li, W.-W.⁶ Lin, Y.-F.⁷ Aparecido-Ferreira, A.⁸ Tsukagoshi, K.⁹

27
- 84883179670
- B. Radisavljevic and A. Kis, Nat. Mater. 12, 815 (2013). 10.1038/nmat3687
- (2013) Nat. Mater. , vol.12 , pp. 815
- Radisavljevic, B.¹ Kis, A.²

28
- 79952768731
- M. A. Kuroda, J. Tersoff, and G. J. Martyna, Phys. Rev. Lett. 106, 116804 (2011). 10.1103/PhysRevLett.106.116804
- (2011) Phys. Rev. Lett. , vol.106
- Kuroda, M.A.¹ Tersoff, J.² Martyna, G.J.³

29
- 84889862190
- (Wiley).
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, 2006).
- (2006) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

30
- 84896376786
- S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J. S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, and R. M. Wallace, Nano Lett. 14, 1337 (2014). 10.1021/nl4043505
- (2014) Nano Lett. , vol.14 , pp. 1337
- Chuang, S.¹ Battaglia, C.² Azcatl, A.³ McDonnell, S.⁴ Kang, J.S.⁵ Yin, X.⁶ Tosun, M.⁷ Kapadia, R.⁸ Fang, H.⁹ Wallace, R.M.¹⁰

31
- 84863855836
- H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and A. Javey, Nano Lett. 12, 3788 (2012). 10.1021/nl301702r
- (2012) Nano Lett. , vol.12 , pp. 3788
- Fang, H.¹ Chuang, S.² Chang, T.C.³ Takei, K.⁴ Takahashi, T.⁵ Javey, A.⁶

32
- 84862776831
- H. Liu and P. D. Ye, IEEE Electron Device Lett. 33, 546 (2012). 10.1109/LED.2012.2184520
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 546
- Liu, H.¹ Ye, P.D.²

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