Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

Nature Communications

Volumn 7, Issue , 2016, Pages

  Li, Yao ^a   Duerloo, Karel Alexander N ^b   Wauson, Kerry ^c   Reed, Evan J ^b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

^c Horeshoe Cir Jett Hall   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY; CRYSTAL STRUCTURE; ELECTRONIC EQUIPMENT; ENERGY USE; FILM; OPTICAL PROPERTY; PHASE TRANSITION; SEMICONDUCTOR INDUSTRY;

ARTICLE; CHANNEL GATING; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; DIELECTRIC CONSTANT; ELECTRIC POTENTIAL; PHASE TRANSITION; PHYSICAL PARAMETERS; SEMICONDUCTOR; SIMULATION; STATIC ELECTRICITY;

EID: 84958025957     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms10671     Document Type: Article

References (49)

1. Lencer, D. et al. A map for phase-change materials. Nat. Mater. 7, 972-977 (2008).
2. Wong, H.-S. P. et al. Phase change memory. Proc. IEEE 98, 2201-2227 (2010).
3. Wong, H.-S. P. et al. Metal-oxide RRAM. Proc. IEEE 100, 1951-1970 (2012).
4. Zhou, Y. & Ramanathan, S. Correlated electron materials and field effect transistors for logic: a review. Crit. Rev. Solid State Mater. Sci. 38, 286-317 (2013).
5. Shu, M. J. et al. Ultrafast terahertz-induced response of GeSbTe phase-change materials. Appl. Phys. Lett. 104, 251907 (2014).
6. Aetukuri, N. B. et al. Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy. Nat. Phys. 9, 661-666 (2013).
7. 2 during an ultrafast solid-solid phase transition. Phys. Rev. Lett. 87, 237401 (2001).
8. Kikuzuki, T. & Lippmaa, M. Characterizing a strain-driven phase transition in VO2. Appl. Phys. Lett. 96, 132107 (2010).
9. Wuttig, M. & Yamada, N. Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824-832 (2007).
10. Lee, S.-H., Jung, Y. & Agarwal, R. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory. Nat. Nanotechnol. 2, 626-630 (2007).
11. BulaevskiѤ, L. N. Structural transitions with formation of charge-density waves in layer compounds. Sov. Phys. Uspekhi 19, 836-843 (1976).
12. McMillan, W. L. Theory of discommensurations and the commensurate-incommensurate charge-density-wave phase transition. Phys. Rev. B 14, 1496-1502 (1976).
13. 2. Phys. Rev. B 49, 16899-16916 (1994).
14. 2. Philos. Mag. 31, 255-274 (1975).
15. Castro Neto, A. H. Charge density wave, superconductivity, and anomalous metallic behavior in 2D transition metal dichalcogenides. Phys. Rev. Lett. 86, 4382-4385 (2001).
16. Wilson, J. A. & Yoffe, A. D. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 18, 193-335 (1969).
17. Zhang, J., Liu, J., Huang, J. L., Kim, P. & Lieber, C. M. Creation of nanocrystals through a solid-solid phase transition induced by an STM tip. Science 274, 757-760 (1996).
18. 2. Phys. Rev. B 56, R15573-R15576 (1997).
19. 2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
20. Duerloo, K.-A. N., Li, Y. & Reed, E. J. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers. Nat. Commun. 5, 4214 (2014).
21. 2. ACS Nano 6, 7311-7317 (2012).
22. Gao, G. et al. Charge mediated semiconducting-to-metallic phase transition in molybdenum disulfide monolayer and hydrogen evolution reaction in new 1T′ phase. J. Phys. Chem. C 119, 13124-13128 (2015).
23. 2 monolayer. J. Phys. Chem. C 118, 1515-1522 (2014).
24. 2 monolayer. Adv. Mater. 26, 6467-6471 (2014).
25. 2. Phys. Rev. B 44, 3955-3962 (1991).
26. 2) monolayer. Phys. Chem. Chem. Phys. 17, 14866-14871 (2015).
27. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
28. 2 transistors. Nat. Nanotechnol. 6, 147-150 (2011).
29. 2. Acta Crystallogr. 20, 268-274 (1966).
30. 2. Nat. Phys. 11, 482-486 (2015).
31. 2 crystals. Nano Lett. 14, 6231-6236 (2014).
32. 2. Nano Lett. 15, 2336-2342 (2015).
33. 2. Nat. Nanotechnol. 9, 391-396 (2014).
34. Ray, S. K., Mahapatra, R. & Maikap, S. High-k gate oxide for silicon heterostructure MOSFET devices. J. Mater. Sci. Mater. Electron 17, 689-710 (2006).
35. Kang, L. et al. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric. IEEE Electron Device Lett. 21, 181-183 (2000).
36. Lee, J.-H. et al. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers. Appl. Phys. Lett. 83, 779-781 (2003).
37. Wolborski, M., Rooth, M., Bakowski, M. & Hallén, A. Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition. J. Appl. Phys. 101, 124105 (2007).
38. Shi, W. et al. Superconductivity series in transition metal dichalcogenides by ionic gating. Sci. Rep. 5, 12534 (2015).
39. 2. ACS Nano 8, 5911-5920 (2014).
40. Chen, Y. et al. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 7, 4610-4616 (2013).
41. Zhang, M. et al. Two-dimensional molybdenum tungsten diselenide alloys: photoluminescence, Raman scattering, and electrical transport. ACS Nano 8, 7130-7137 (2014).
42. Kutana, A., Penev, E. S. & Yakobson, B. I. Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying. Nanoscale 6, 5820-5825 (2014).
43. 2. Appl. Phys. Lett. 104, 012101 (2014).
44. Duerloo, K.-A. N. & Reed, E. J. Structural phase transitions by design in monolayer alloys. ACS Nano. doi: 10.1021/acsnano.5b04359 (2015).
45. Champion, J. A. Some properties of (Mo, W) (Se, Te) 2. Br. J. Appl. Phys. 16, 1035 (1965).
46. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
47. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
48. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996).
49. Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188-5192 (1976).