Ultrafast terahertz-induced response of GeSbTe phase-change materials

Applied Physics Letters

Volumn 104, Issue 25, 2014, Pages

  Shu, Michael J ^a,b   Zalden, Peter ^b   Chen, Frank ^b,c   Weems, Ben ^c   Chatzakis, Loannis ^b   Xiong, Feng ^c   Jeyasingh, Rakesh ^c   Hoffmann, Matthias C ^b   Pop, Eric ^c   Wong, H S Philip ^c   Wuttig, Matthias ^d   Lindenberg, Aaron M ^b,c  

^a STANFORD UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c Stanford University   (United States)

^d RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANTIMONY ALLOYS; CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ENERGY GAP; FILMS; OPTICAL PUMPING;

ANNEALING CONDITION; BAND GAP TRANSMISSION; ELECTRO-ABSORPTION; ENERGY RELAXATION PROCESS; PICOSECOND TIME SCALE; SINGLE-CYCLE TERAHERTZ PULSE; STRUCTURAL RESPONSE; SWITCHING THRESHOLDS;

PHASE CHANGE MATERIALS;

EID: 84978953869     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/l.4884816     Document Type: Article

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