SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 6, Issue 11, 2014, Pages 5820-5825

Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying

(3) Kutana, Alex a Penev, Evgeni S a Yakobson, Boris I a

a Rice University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BINARY ALLOYS; ENERGY GAP; HOLE CONCENTRATION; MOLYBDENUM; ORGANIC POLYMERS; TRANSITION METALS; TUNGSTEN;

BAND GAP ENGINEERING; CONFIGURATIONAL SPACES; EFFECTIVE ELECTRONS; MEAN FIELD APPROACH; MEAN FIELD APPROXIMATION; MECHANICAL AND ELECTRONIC PROPERTIES; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN CONCENTRATIONS;

ELECTRONIC PROPERTIES;

EID: 84901008828 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr00177j Document Type: Article

Times cited : (137)

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