Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

Ceramics International

Volumn 42, Issue 4, 2016, Pages 5517-5522

  Maeng, Wanjoo ^a   Lee, Seung Hwan ^b   Kwon, Jung Dae ^c   Park, Jozeph ^d,e   Park, Jin Seong ^b  

^a University of Wisconsin Madison   (United States)

^b Hanyang University   (South Korea)

^c Korea Institute of Material Science   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^e Samsung Display Co   (South Korea)

Author keywords

Annealing; Atomic layer deposition; Copper oxide; Ozone; p type; Thin film transistors

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMS; COPPER; COPPER OXIDES; DEPOSITION; FIELD EFFECT TRANSISTORS; OXIDE FILMS; OZONE; RAPID THERMAL ANNEALING; SEMICONDUCTING ORGANIC COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; TEMPERATURE; THIN FILMS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITED; COPPER OXIDE THIN FILMS; COPPER PRECURSORS; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; P-TYPE; RAPID THERMAL ANNEALING (RTA); THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 84955637803     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2015.12.109     Document Type: Article

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