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Volumn 97, Issue 22, 2010, Pages

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

(10) Sung, Sang Yun a Kim, Se Yun a Jo, Kwang Min a Lee, Joon Hyung a Kim, Jeong Joo a Kim, Sang Gon b Chai, Kyoung Hoon b Pearton, S J c Norton, D P c Heo, Young Woo a

a Kyungpook National University (South Korea)

b LG Innotek Co Ltd (South Korea)

c University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ANNEALING TREATMENTS; BOTTOM GATE; ENHANCEMENT MODES; FIELD-EFFECT; FIELD-EFFECT MOBILITIES; LOW TEMPERATURES; ON/OFF RATIO; P-TYPE; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE;

COPPER OXIDES; FIELD EFFECT TRANSISTORS; MAGNETRON SPUTTERING;

THIN FILM TRANSISTORS;

EID: 78650653090 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3521310 Document Type: Article

Times cited : (113)

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