Effects of post-annealing on (110) Cu 2O epitaxial films and origin of low mobility in Cu 2O thin-film transistor

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 9, 2009, Pages 2192-2197

  Matsuzaki, Kosuke ^a   Nomura, Kenji ^a   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; FIELD-EFFECT MOBILITIES; GROWTH CONDITIONS; HIGH MOBILITY; HIGH QUALITY; LOW MOBILITY; MGO SUBSTRATE; OPTICAL ANALYSIS; OPTICAL MEASUREMENT; OXYGEN PARTIAL PRESSURE; POST ANNEALING; POST DEPOSITION ANNEALING;

ANNEALING; DRAIN CURRENT; EPITAXIAL FILMS; HALL EFFECT; MAGNETIC FIELD EFFECTS; OPTICAL DATA PROCESSING; OXIDE FILMS; OXYGEN; SEMICONDUCTING ORGANIC COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

COPPER;

EID: 70349134314     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881795     Document Type: Article

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