Controlled growth and properties of p-type cuprous oxide films by plasma-enhanced atomic layer deposition at low temperature

Applied Surface Science

Volumn 285, Issue PARTB, 2013, Pages 373-379

  Kwon, Jung Dae ^a   Kwon, Se Hun ^b   Jung, Tae Hoon ^c   Nam, Kee Seok ^a   Chung, Kwun Bum ^d   Kim, Dong Ho ^a   Park, Jin Seong ^c  

^a Korea Institute of Material Science   (South Korea)

^b Pusan National University   (South Korea)

^c Hanyang University   (South Korea)

^d Dankook University   (South Korea)

Author keywords

Cuprous oxide; Heterojunction; p type; PEALD; Semiconductor; XPS; XRD

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; COPPER OXIDES; ELECTRIC RECTIFIERS; HALL MOBILITY; HETEROJUNCTIONS; HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; PLASTIC BOTTLES; SEMICONDUCTING FILMS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; TEMPERATURE; THIN FILMS; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CONTROLLED DEPOSITION; CUPROUS OXIDE; HETEROJUNCTION DIODES; P TYPE CONDUCTIVITY; P-TYPE; PEALD; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE PHASE;

OXIDE FILMS;

EID: 84887028271     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.08.063     Document Type: Article

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