Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

Nature Communications

Volumn 7, Issue , 2016, Pages

  Nukala, Pavan ^a   Lin, Chia Chun ^a   Composto, Russell ^a   Agarwal, Ritesh ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM DERIVATIVE; GERMANIUM TELLURIDE; NANOWIRE; UNCLASSIFIED DRUG;

EFFICIENCY MEASUREMENT; ELECTRONIC EQUIPMENT; ENERGY EFFICIENCY; GERMANIUM; POWER; TELLURIDE;

ARTICLE; CONTROLLED STUDY; CRYSTAL STRUCTURE; CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ENERGY CONVERSION; FLASH MEMORY; IRRADIATION; NANODEVICE; NANOENGINEERING; PHASE CHANGE MATERIAL; PHASE TRANSITION; POWER SUPPLY;

EID: 84955447925     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms10482     Document Type: Article

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