Direct observation of metal-insulator transition in single-crystalline Germanium telluride nanowire memory devices prior to amorphization

Nano Letters

Volumn 14, Issue 4, 2014, Pages 2201-2209

  Nukala, Pavan ^a   Agarwal, Rahul ^a   Qian, Xiaofeng ^b   Jang, Moon Hyung ^a   Dhara, Sajal ^a   Kumar, Karthik ^a   Johnson, A T Charlie ^a,c   Li, Ju ^b   Agarwal, Ritesh ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b USA   (United States)

^c UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

antiphase boundary; GeTe; in situ microscopy; metal insulator transition; phase change memory; weak localization

Indexed keywords

ELECTRONIC PROPERTIES; NANOWIRES; NONVOLATILE STORAGE; PHASE CHANGE MEMORY; SEMICONDUCTOR INSULATOR BOUNDARIES;

ANTIPHASE BOUNDARIES; ELECTRONIC INSTABILITIES; GERMANIUM TELLURIDE; GETE; IN-SITU MICROSCOPIES; NONVOLATILE MEMORY DEVICES; STRUCTURAL DISORDERS; WEAK LOCALIZATION;

CRYSTALLINE MATERIALS;

EID: 84897973097     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5007036     Document Type: Article

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