Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Skelton, J M ^a   Loke, D ^a,b,c   Lee, T H ^a   Elliott, S R ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS; BULK AMORPHOUS; CELL SIZE; CLASSICAL NUCLEATION THEORY; FUNDAMENTAL LIMITATIONS; INTERMEDIATE RESISTANCE; INTERMEDIATE STATE; MEMORY DENSITY; MULTI-STATE; MULTILEVEL PROGRAMMING; PHASE CHANGES; SCALING LIMITS; VOLTAGE WINDOW;

MOLECULAR DYNAMICS; PHASE CHANGE MEMORY; TELLURIUM COMPOUNDS; TRANSIENTS;

GERMANIUM;

EID: 84867090839     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748961     Document Type: Article

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