Continuous controllable amorphization ratio of nanoscale phase change memory cells

Applied Physics Letters

Volumn 104, Issue 22, 2014, Pages

  He, Q ^a,b   Li, Z ^a,b   Peng, J H ^a,b   Deng, Y F ^a,b   Zeng, B J ^a,b   Zhou, W ^a,b   Miao, X S ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; PHASE CHANGE MEMORY;

COMPACT MODEL; HEAT ACCUMULATION EFFECTS; MULTI-PARAMETER CHANGES; PHASE CHANGE MEMORY (PCM); PHASE CHANGE MEMORY CELLS; SINGLE PARAMETER; THERMAL BEHAVIORS; THREE PARAMETERS;

NANOTECHNOLOGY;

EID: 84902438627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4880936     Document Type: Article

References (25)

1. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450-1455 (1968).
2. C. M. Lieber and Z. L. Wang, MRS Bull. 32, 99-108 (2007).
3. F. Xiong, M.-H. Bae, Y. Dai, A. D. Liao, A. Behnam, E. A. Carrion, S. Hong, D. Ielmini, and E. Pop, Nano Lett. 13, 464 (2013).
4. S. W. Nam, H. S. Chung, Y. C. Lo, L. Qi, J. Li, Y. Lu, A. T. C. Johnson, Y. W. Jung, P. Nukala, and R. Agarwal, Science 336, 1561 (2012).
5. D. S. Chao, C. Lien, C. M. Lee, Y. C. Chen, J. T. Yeh, F. Chen, M. J. Chen, P. H. Yen, M. J. Kao, and M. J. Tsai, Appl. Phys. Lett. 92, 062108 (2008).
6. W. Chen, Z. Li, J. H. Peng, Y. F. Deng, and X. S. Miao, Appl. Phys. Lett. 101, 142107 (2012).
7. R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, and H. Tanida, Nano Lett. 10, 414-419 (2010).
8. Y. Jung, C. Y. Yang, S. H. Lee, and R. Agarwal, Nano Lett. 9, 2103-2108 (2009).
9. S. Raoux, W. Welnic, and D. Ielmini, Chem. Rev. 110, 240-267 (2010).
10. S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y. C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S. H. Chen, and H. L. Lung, IBM J. Res. Dev. 52, 465-479 (2008).
11. N. Papandreou, H. Pozidis, T. Mittelholzer, G. Close, M. Breitwisch, C. Lam, and E. Eleftheriou, in Proceedings of International Memory Workshop (IMW) (IEEE, 2011).
12. Y. Yin and S. Hosaka, Jpn. J. Appl. Phys., Part 1 51, 064101 (2012).
13. Y. Yin and S. Hosaka, Appl. Phys. Lett. 100, 253503 (2012).
14. T. Nirschl, J. Phipp, T. Happ, G. Burr, B. Rajendran, M. H. Lee, A. Schrott, M. Yang, M. Breitwisch, and C. F. Chen, Tech. Dig. - Int. Electron Devices Meet. 2007, 461-464.
15. N. Papandreou, A. Pantazi, A. Sebastian, M. Breitwisch, C. Lam, H. Pozidis, and E. Eleftheriou, in Proceedings of the 17th IEEE International Electronics, Circuits and Systems(ICECS) Conference (IEEE, 2010), pp. 1017-1020.
16. J. Feng, Y. F. Lai, B. W. Qiao, B. C. Cai, Y. Y. Lin, T. A. Tang, and B. Chen, Jpn. J. Appl. Phys., Part 1 46, 5724 (2007).
17. D. S. Chao, H. H. Hsu, M. J. Chen, Y. C. Chen, F. Chen, C. M. Lee, P. Yen, C. W. Chen, W. H. Wang, and W. S. Chen, in Int. Symp. VLSI Technol., Syst., Appl., Proc. Tech. Pap. 2007, pp. 1,2.
18. F. Rao, Z. T. Song, M. Zhong, L. C. Wu, G. M. Feng, B. Liu, S. L. Feng, and B. Chen, Jpn. J. Appl. Phys., Part 2 46, L25 (2007).
19. J. M. Skelton, D. Loke, T. H. Lee, and S. R. Elliott, J. Appl. Phys. 112, 064901 (2012).
20. F. Bedeschi, R. Fackenthal, C. Resta, E. M. Donze, M. Jagasivamani, E. C. Buda, F. Pellizzer, D. W. Chow, A. Cabrini, and G. Calvi, IEEE J. Solid-State Circuits 44, 217-227 (2009).
21. A. Pantazi, A. Sebastian, N. Papandreou, M. J. Breitwisch, C. Lam, H. Pozidis, and E. Eleftheriou, in Proc. Eur. Phase Change Ovonics Symp. 2009, 34-41.
22. D. S. Chao, F. T. Chen, Y. Y. Hsu, W. H. Liu, C. M. Lee, C. M. Chen, W. S. Chen, M. J. Kao, and M. J. Tsai, in Int. Symp. VLSI Technol., Syst., Appl., Proc. Tech. Pap. 2009, 39-40.
23. K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, and Y. Inoue, IEEE Trans. Electron Devices 55, 1672 (2008).
24. Y. F. Deng, Z. Li, J. H. Peng, C. Liu, and X. S. Miao, Appl. Phys. Lett. 103, 233501 (2013).
25. See supplementary material at http://dx.doi.org/10.1063/1.4880936 for the introduction of PCM device and repeated experiments.