Well-aligned NiSi/Si heterostructured nanowire arrays as field emitters

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volumn 33, Issue 2, 2015, Pages

  Lv, Shasha ^a   Li, Zhengcao ^a   Liao, Jiecui ^a   Zhang, Zhengjun ^a   Miao, Wei ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; FIELD EFFECT TRANSISTORS; FIELD EMISSION; NANOWIRES; NICKEL; NICKEL COATINGS; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; REFRACTORY METAL COMPOUNDS; SILICIDES;

ELECTRICAL AND OPTICAL PROPERTIES; FIELD EMISSION MEASUREMENTS; FIELD ENHANCEMENT FACTOR; HETEROSTRUCTURED NANOWIRES; METAL GATE ELECTRODES; MORPHOLOGICAL FEATURES; MULTISTEP TEMPLATE REPLICATIONS; SINGLE CRYSTALLINE SILICON;

NICKEL COMPOUNDS;

EID: 84948422095     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4898782     Document Type: Article

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