Erratum: NiSi crystal structure, site preference, and partitioning behavior of palladium in NiSi(Pd)/Si(100) thin films: Experiments and calculations (Applied Physics Letters (2011) 99 (013106) DOI: 10.1063/1.3606536);NiSi crystal structure, site preference, and partitioning behavior of palladium in NiSi(Pd)/Si(100) thin films: Experiments and calculations

Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

  Mao, Zugang ^a   Kim, Yeong Cheol ^b   Lee, Hi Deok ^c   Adusumilli, Praneet ^a   Seidman, David N ^a  

^a Northwestern University   (United States)

^b Korea University of Technology and Education   (South Korea)

^c Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; THIN FILMS; X RAY DIFFRACTION;

ATOM-PROBE TOMOGRAPHY; CONCENTRATION PROFILES; DRIVING FORCES; FIRST-PRINCIPLES CALCULATION; ORTHORHOMBIC STRUCTURES; SI SUBSTRATES; SITE PREFERENCES; SUB-LATTICES;

CRYSTAL STRUCTURE;

EID: 79960511699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4986785     Document Type: Erratum

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