|
Volumn 4, Issue 60, 2014, Pages 31729-31734
|
Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ASPECT RATIO;
ELECTRIC FIELDS;
FIELD EMISSION;
SILICON;
SURFACE ROUGHNESS;
EMISSION CURRENT;
EMITTING EFFICIENCY;
FUNCTION OF TIME;
FUTURE APPLICATIONS;
HIGH CURRENT DENSITIES;
SILICON NANOWIRES;
SIZE-CONTROLLABLE;
SURFACE GEOMETRIES;
NANOWIRES;
|
EID: 84905493006
PISSN: None
EISSN: 20462069
Source Type: Journal
DOI: 10.1039/c4ra04440a Document Type: Article |
Times cited : (13)
|
References (34)
|