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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3686-3689

Fabrication and electrical characterization of nanoscaled-schottky diodes based on metal suicide/silicon nanowires with scanning probe lithography and wet etching

(4) Sheu, Jeng Tzong a Yeh, Sheng Pin b Lien, Chen Hsin b Tsai, S T c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

c NATIONAL CHI NAN UNIVERSITY (Taiwan)

Author keywords

Nanometer sized schottky diode; Nickel monosilicide; RTA; Scanning probe lithography; Silicon nanowire (SiNW); TMAH

Indexed keywords

ANNEALING; ETCHING; HETEROJUNCTIONS; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS;

NANOMETER-SIZED SCHOTTKY DIODE; NICKEL MONOSILICIDE; SCANNING PROBE LITHOGRAPHY; SILICON NANOWIRE (SINW);

SEMICONDUCTING SILICON;

EID: 33646933236 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.3686 Document Type: Article

Times cited : (8)

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