Formation of vertically aligned cobalt Silicide Nanowire arrays through a solid-state reaction

IEEE Transactions on Nanotechnology

Volumn 12, Issue 5, 2013, Pages 704-711

  Lee, Seulah ^a   Yoon, Jaehong ^a   Koo, Bonwoong ^b   Shin, Dong Hoon ^c   Koo, Ja Hoon ^a   Lee, Cheol Jin ^c   Kim, Young Woon ^b   Kim, Hyungjun ^a   Lee, Taeyoon ^a  

^a Yonsei University   (South Korea)

^b Seoul National University   (South Korea)

^c Korea University   (South Korea)

Author keywords

Atomic layer deposition (ALD); cobalt silicide nanowire; field emission; rapid thermal annealing (RTA); Schottky diode; solid state reaction

Indexed keywords

AQUEOUS ELECTROLESS ETCHINGS; COBALT SILICIDE; FIELD EMISSION MEASUREMENTS; I-V CHARACTERISTIC CURVE; RAPID THERMAL ANNEALING (RTA); RAPID THERMAL ANNEALING PROCESS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES;

COBALT; DEPOSITION; FIELD EMISSION; NANOWIRES; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; SOLID STATE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER DEPOSITION;

EID: 84883756421     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2268578     Document Type: Article

References (44)

1. A. M.Mohammad, S. Dey, K.-K. Lew, J. M. Redwing, and S. E.Mohney, "Fabrication of cobalt silicide nanowire contacts to silicon nanowires," J. Electrochem. Soc., vol. 150, no. 9, pp. G577-G580, 2003.
2. F. Zhou, J. Szczech, M. T. Pettes, A. L. Moore, S. Jin, and L. Shi, "Determination of transport properties in chromium disilicide nanowires via combined thermoelectric and structural characterizations," Nano Lett., vol. 7, no. 6, pp. 1649-1654, 2007. (Pubitemid 47140439)
3. Y. J. Yoon, G. B. Kim, and H. K. Baik, "Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters," J. Vac. Sci. Technol. B, vol. 17, no. 2, pp. 627-631, 1999. (Pubitemid 129721233)
4. H. K. Lin, Y. F. Tzeng, C. H. Wang, N. H. Tai, I. N. Lin, C. Y. Lee, and H. T. Chiu, "Ti5 Si3 nanowire and its field emission property," Chem. Mater., vol. 20, pp. 2429-2431, 2008.
5. B.Xiang, Q. X.Wang, Z.Wang, X. Z. Zhang, L. Q. Liu, J. Xu, and D.P.Yu, "Synthesis and field emission properties of TiSi2 nanowires," Appl. Phys. Lett., vol. 86, no. 24, pp. 243103-1-243103-3, 2005.
6. K. Seo, K. S. K. Varadwaj, P. Mohanty, S. Lee, Y. Jo,M.-H. Jung, J. Kim, and B. Kim, "Magnetic properties of single-crystalline CoSi nanowires," Nano Lett., vol. 7, no. 5, pp. 1240-1245, 2007. (Pubitemid 46834404)
7. J. R. Szczech, A. L. Schmitt, M. J. Bierman, and S. Jin, "Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport," Chem. Mater., vol. 19, no. 13, pp. 3238-3243, 2007. (Pubitemid 47150368)
8. K. S. K. Varadwaj, K. Seo, J. In, P.Mohanty, J. Park, and B. Kim, "Phasecontrolled growth of metastable Fe5 Si3 nanowires by a vapor transport method," J. Amer. Chem. Soc., vol. 129, no. 27, pp. 8594-8599, 2007. (Pubitemid 47066522)
9. K.Kang, S. K. Kim, C. J. Kim, andM. H. Jo, "The role of NiOx overlayers on spontaneous growth of NiSix nanowires from Ni seed layers," Nano Lett., vol. 8, no. 2, pp. 431-436, 2008. (Pubitemid 351345995)
10. Y.-L. Chueh, M.-T. Ko, L.-J. Chou, L.-J. Chen, C.-S.Wu, and C.-D. Chen, "TaSi2 nanowires: A potential field emitter and interconnect," Nano Lett., vol. 6, no. 8, pp. 1637-1644, 2006. (Pubitemid 44327524)
11. H. K. Lin, H. A. Cheng, C. Y. Lee, and H. T. Chiu, "Chemical vapor deposition of TiSi nanowires on C54 TiSi2 thin film: An amorphous titanium silicide interlayer assisted nanowire growth," Chem. Mater., vol. 21, no. 22, pp. 5388-5396, 2009.
12. C. J. Kim, K. Kang, Y. S. Woo, K. G. Ryu, H. Moon, J. M. Kim, D. S. Zang, and M. H. Jo, "Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties," Adv. Mater., vol. 19, no. 21, pp. 3637-3642, 2007. (Pubitemid 350134616)
13. K. Seo, S. Lee, H. Yoon, J. In, K. S. K. Varadwaj, Y. Jo, M. H. Jung, J. Kim, and B. Kim, "Composition-tuned ConSi nanowires: Locationselective simultaneous growth along temperature gradient," ACS Nano, vol. 3, no. 5, pp. 1145-1150, 2009.
14. Y. C. Lin, K. C. Lu, W. W. Wu, J. Bai, L. J. Chen, K. Tu, and Y. Huang, "Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices," Nano Lett., vol. 8, no. 3, pp. 913-918, 2008.
15. J. Kim, J. Bae,W. A. Anderson, H. Kim, and K. Kim, "Solid-state growth of nickel silicide nanowire by the metal-induced growth method," J. Mater. Res., vol. 21, no. 11, pp. 2936-2940, 2006. (Pubitemid 44816727)
16. S. Lee, J. H. Koo, J. Seo, S. D. Kim, K. H. Lee, S. Im, Y. W. Kim, and T. Lee, "The effects of surface modification on the electrical properties of p-n+ junction silicon nanowires grown by an aqueous electroless etching method," J. Nanopart. Res., vol. 14, no. 5, p. 840, 2012.
17. J. Seo, H. Lee, S. Lee, T. I. Lee, J. M. Myoung, and T. Lee, "Direct gravure printing of silicon nanowires using entropic attraction forces," Small, vol. 8, no. 10, pp. 1614-1621, 2012.
18. M. Dawood, H. Zheng, N. Kurniawan, K. Leong, Y. Foo, R. Rajagopalan, S. Khan, and W. Choi, "Modulation of surface wettability of superhydrophobic substrates using Si nanowire arrays and capillary-force-induced nanocohesion," Soft Matter, vol. 8, no. 13, pp. 3549-3557, 2012.
19. H.-B.-R. Lee, G. H. Gu, C. G. Park, and H. Kim, "Silicidation of Co/Si core shell nanowires," J. Electrochem. Soc., vol. 159, no. 5, pp. K146- K151, 2012.
20. C. Detavernier, R. L. Van Meirhaeghe, F. Cardon, R. A. Donaton, and K. Maex, "The influence of Ti capping layers on CoSi2 formation," Microelectron. Eng., vol. 50, no. 1-4, pp. 125-132, 2000. (Pubitemid 32211805)
21. M. Setton and J. Van der Spiegel, "Silicide formation for Co/Ti/Si structures processed by RTP under vacuum," Appl. Surf. Sci., vol. 38, no. 1-7, pp. 62-71, 1989. (Pubitemid 20603112)
22. H.-B.-R. Lee, W.-H. Kim, J. W. Lee, J.-M. Kim, K. Heo, I. C. Hwang, Y. Park, S. Hong, and H. Kim, "High quality area-selective atomic layer deposition co using ammonia gas as a reactant," J. Electrochem. Soc., vol. 157, no. 1, pp. D10-D15, 2010.
23. J. Chevallier and A. N. Larsen, "Epitaxial nickel and cobalt suicide formation by rapid thermal annealing," Appl. Phys. A-Solid Surf., vol. 39, no. 2, pp. 141-145, 1986. (Pubitemid 16493130)
24. S. S. Lau, J. W. Mayer, and K. N. Tu, "Interactions in the Co/Si thin-film system - Part I: kinetics," J. Appl. Phys., vol. 49, no. 7, pp. 4005-4010, 1978. (Pubitemid 8635298)
25. S.-L. Zhang and M. O? stling, "Metal silicides in CMOS technology: Past, present, and future trends," Crit. Rev. Solid StateMater. Sci., vol. 28, no. 1, pp. 1-129, 2003.
26. A. Reader, A. H. Ommen, P.Weijs, R.Wolters, and D. Oostra, "Transition metal silicides in silicon technology," Rep. Prog. Phys., vol. 56, no. 11, pp. 1397-1467, 1993.
27. C. D. Lien,M. A.Nicolet, and S. Lau, "Kinetics of CoSi2 from evaporated silicon," Appl. Phys. A-Mater. Sci. Process., vol. 34, no. 4, pp. 249-251, 1984.
28. W. J. Freitas and J. W. Swart, "The influence of impurities on cobalt silicide formation," J. Electrochem. Soc., vol. 138, no. 10, pp. 3067-3070, 1991.
29. A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. Yang, "Enhanced thermoelectric performance of rough silicon nanowires," Nature, vol. 451, pp. 163-167, 2008.
30. J. Jie, W. Zhang, K. Peng, G. Yuan, C. S. Lee, and S. T. Lee, "Surface dominated transport properties of silicon nanowires," Adv. Funct. Mater., vol. 18, no. 20, pp. 3251-3257, 2008.
31. G. J. van Gurp, W. F. van der Weg, and D. Sigurd, "Interactions in the Co/Si thin-film system - Part II: Diffusion-marker experiments," J. Appl. Phys., vol. 49, no. 7, pp. 4011-4020, 1978. (Pubitemid 8635299)
32. Y.-W. Ok, T.-Y. Seong, C.-J. Choi, and K. N. Tu, "Field emission from Nidisilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing," Appl. Phys. Lett., vol. 88, no. 4, pp. 043106-1-043106-3, 2006.
33. R. F. Pierret, SemiconductorDevice Fundamentals. Reading, MA, USA: Addison-Wesley, 1996.
34. L. Porter, R. Davis, J. Bow, M. Kim, and R. Carpenter, "Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6 H) silicon carbide (0001)," J. Mater. Res., vol. 10, no. 1, pp. 26-33, 1995.
35. C. Y. Liu, W. S. Li, L. W. Chu, M. Y. Lu, C. J. Tsai, and L. J. Chen, "An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters," Nanotechnology, vol. 22, no. 5, pp. 055603-1-055603-7, 2011.
36. C. Liu, Y. Tong, H.-M. Cheng, D. Golberg, and Y. Bando, "Field emission properties of macroscopic single-walled carbon nanotube strands," Appl. Phys. Lett., vol. 86, no. 22, pp. 223114-1-223114-3, 2005.
37. Y. L. Chueh, L. J. Chou, S. L. Cheng, J. H. He,W. W.Wu, and L. J. Chen, "Synthesis of taperlike Si nanowires with strong field emission," Appl. Phys. Lett., vol. 86, no. 13, pp. 133112-1-133112-3, 2005.
38. S. M. Sze, Semiconductor Devices: Physics and Technology. Hoboken, NJ, USA: Wiley, 2008.
39. S. K. Cheung and N. W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Appl. Phys. Lett., vol. 49, no. 2, pp. 85-87, 1986.
40. J. H. Yun, Y. C. Park, J. Kim, H. J. Lee, W. A. Anderson, and J. Park, "Solution-processed germanium nanowire-positioned Schottky solar cells," Nanoscale Res. Lett., vol. 6, no. 1, pp. 1-5, 2011.
41. C. S. Lao, J. Liu, P. Gao, L. Zhang, D. Davidovic, R. Tummala, and Z. L. Wang, "ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across Au electrodes," Nano Lett., vol. 6, no. 2, pp. 263-266, 2006. (Pubitemid 43382963)
42. J. R. Kim, H. Oh, H. M. So, J. J. Kim, J. Kim, C. J. Lee, and S. C. Lyu, "Schottky diodes based on a single GaN nanowire," Nanotechnology, vol. 13, no. 5, pp. 701-704, 2002. (Pubitemid 35263806)
43. F. Ĺeonard, A. A. Talin, B. S. Swartzentruber, and S. T. Picraux, "Diameter-dependent electronic transport properties of Au-catalyst/ Genanowire Schottky diodes," Phys. Rev. Lett., vol. 102, no. 10, pp. 106805- 1-106805-4, 2009.
44. Y. Tian, Y. L. Jiang, Y. Chen, F. Lu, and B. Z. Li, "Electrically active defects in Ni-Si silicide studied by deep-level transient spectroscopy," Semicond. Sci. Technol., vol. 17, no. 1, pp. 83-86, 2002. (Pubitemid 34080687)