Directed growth of nickel silicide nanowires

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1389-1391

  Decker, C A ^a   Solanki, R ^a   Freeouf, J L ^a   Carruthers, J R ^a   Evans, D R ^b  

^a OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL SILICIDE NANOWIRES; REACTOR PRESSURE;

CURRENT VOLTAGE CHARACTERISTICS; DECOMPOSITION; EVAPORATION; NICKEL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON WAFERS; SUBSTRATES; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 1642326751     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650877     Document Type: Article

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