-
1
-
-
81555220119
-
Multigate transistors as the future of classical metal-oxide-semiconductor filed-effect transistors
-
Ferain, I., Colinge, C. A. and Colinge, J.-P. Multigate transistors as the future of classical metal-oxide-semiconductor filed-effect transistors. Nature 479, 310-316 (2011).
-
(2011)
Nature
, vol.479
, pp. 310-316
-
-
Ferain, I.1
Colinge, C.A.2
Colinge, J.-P.3
-
4
-
-
84891365067
-
Electrically driven tuning of the dielectric constant in MoS2 layers
-
Santos, E. J. G. and Kaxiras, E. Electrically driven tuning of the dielectric constant in MoS2 layers. ACS nano 7, 10741-10746 (2013).
-
(2013)
ACS Nano
, vol.7
, pp. 10741-10746
-
-
Santos, E.J.G.1
Kaxiras, E.2
-
5
-
-
79952406873
-
Single-layer MoS2 transistors
-
Radisavljevic, B. et al. Single-layer MoS2 transistors. Nature Nanotech. 6, 147-150 (2011).
-
(2011)
Nature Nanotech.
, vol.6
, pp. 147-150
-
-
Radisavljevic, B.1
-
7
-
-
84901193930
-
Black phosphorus filed-effect transistors
-
Li, L. et al. Black phosphorus filed-effect transistors. Nature Nanotech. 9, 372-377 (2014).
-
(2014)
Nature Nanotech.
, vol.9
, pp. 372-377
-
-
Li, L.1
-
8
-
-
84898060562
-
Phosphorene: An unexplored 2D Semiconductor with a high hole mobility
-
Liu, H. et al. Phosphorene: An unexplored 2D Semiconductor with a high hole mobility. ACS nano 8, 4033-4041 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 4033-4041
-
-
Liu, H.1
-
9
-
-
84941093587
-
Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface
-
Feng, W., Zheng, W., Cao, W. and Hu, P. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Adv. Mater. 26, 6587-6593 (2014).
-
(2014)
Adv. Mater.
, vol.26
, pp. 6587-6593
-
-
Feng, W.1
Zheng, W.2
Cao, W.3
Hu, P.4
-
10
-
-
77954737391
-
Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
-
Zhu, W., Perebeinos, V., Freitag, M. and Avouris, P. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene. Phys. Rev. B 80, 235402 (2009).
-
(2009)
Phys. Rev. B
, vol.80
, pp. 235402
-
-
Zhu, W.1
Perebeinos, V.2
Freitag, M.3
Avouris, P.4
-
11
-
-
84907477868
-
Tunable optical properties of multilayer black phosphorus thin films
-
Low, T. et al. Tunable optical properties of multilayer black phosphorus thin films. Phys. Rev. B 90, 075434 (2014).
-
(2014)
Phys. Rev. B
, vol.90
, pp. 075434
-
-
Low, T.1
-
12
-
-
84871091724
-
Effects of strain on band structure and effective masses in MoS2
-
Peelaers, H. and Van de Walle, C. G. Effects of strain on band structure and effective masses in MoS2. Phys. Rev. B 86, 241401(R) (2012).
-
(2012)
Phys. Rev. B
, vol.86 R
, pp. 241401
-
-
Peelaers, H.1
Van De Walle, C.G.2
-
13
-
-
38549085884
-
Gate-induced insulating state in bilayer graphene devices
-
Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F. and Vandersypen, M. K. Gate-induced insulating state in bilayer graphene devices. Nature Mater. 7, 151-157 (2008).
-
(2008)
Nature Mater.
, vol.7
, pp. 151-157
-
-
Oostinga, J.B.1
Heersche, H.B.2
Liu, X.3
Morpurgo, A.F.4
Vandersypen, M.K.5
-
14
-
-
67149121054
-
Direct observation of a widely tunable bandgap in bilayer graphene
-
Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820-823 (2009).
-
(2009)
Nature
, vol.459
, pp. 820-823
-
-
Zhang, Y.1
-
15
-
-
77958051334
-
-
Nano Lett.
-
Miyazaki, H., Tsukagoshi, K., Kanda, A., Otani, M. and Okada, S. Influence of disorder on conductance in bilayer graphene under perpendicular electric field. Nano Lett. 10, 3888-3892 (2010).
-
(2010)
Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field.
, vol.10
, pp. 3888-3892
-
-
Miyazaki, H.1
Tsukagoshi, K.2
Kanda, A.3
Otani, M.4
Okada, S.5
-
16
-
-
76749150089
-
-
Nano Lett.
-
Xia, F., Farmer, D. B., Lin, Y.-M. and Avouris, P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett. 10, 715-718 (2010).
-
(2010)
Graphene Field-effect Transistors with High On/off Current Ratio and Large Transport Band Gap at Room Temperature.
, vol.10
, pp. 715-718
-
-
Xia, F.1
Farmer, D.B.2
Lin, Y.-M.3
Avouris, P.4
-
17
-
-
77957888880
-
Electronic transport in dual-gated bilayer graphene at large displacement fields
-
Taychatanapat, T. and Jarillo-Herrero, P. Electronic transport in dual-gated bilayer graphene at large displacement fields. Phys. Rev. Lett. 105, 16601 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 16601
-
-
Taychatanapat, T.1
Jarillo-Herrero, P.2
-
18
-
-
77957593714
-
Transport in gapped bilayer graphene: The role of potential fluctuations
-
Zou, K. and Zhu, J. Transport in gapped bilayer graphene: The role of potential fluctuations. Phys. Rev. B 82, 081407(R) (2010).
-
(2010)
Phys. Rev. B
, vol.82 R
, pp. 081407
-
-
Zou, K.1
Zhu, J.2
-
20
-
-
77949770552
-
Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
-
Szafranek, B. N., Schall, D., Otto, M., Neumaier, D. and Kurz, H. Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature. Appl. Phys. Lett. 96, 112103 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 112103
-
-
Szafranek, B.N.1
Schall, D.2
Otto, M.3
Neumaier, D.4
Kurz, H.5
-
21
-
-
80755189433
-
-
Toward tunable band gap and tunable Dirac point in bilayer graphene with molecular doping
-
Yu, W. J., Liao, L., Chae, S. H., Lee, Y. H. and Duan, X. Toward tunable band gap and tunable Dirac point in bilayer graphene with molecular doping. Nano Lett. 11, 4759-4763 (2011).
-
(2011)
Nano Lett.
, vol.11
, pp. 4759-4763
-
-
Yu, W.J.1
Liao, L.2
Chae, S.H.3
Lee, Y.H.4
Duan, X.5
-
22
-
-
79960203495
-
High on/off ratios in bilayer graphene field effect transistors realized by surface doping
-
Szafranek, B. N., Schall, D., Neumaier, D. and Kurz, H. High on/off ratios in bilayer graphene field effect transistors realized by surface doping. Nano Lett. 11, 2640-2643 (2011).
-
(2011)
Nano Lett
, vol.11
, pp. 2640-2643
-
-
Szafranek, B.N.1
Schall, D.2
Neumaier, D.3
Kurz, H.4
-
23
-
-
84858233159
-
Current saturation and voltage gain in bilayer graphene field effect transistors
-
Szafranek, B. N., Fiori, G., Schall, D., Neumaier, D. and Kurz, H. Current saturation and voltage gain in bilayer graphene field effect transistors. Nano Lett. 12, 1324-1328 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 1324-1328
-
-
Szafranek, B.N.1
Fiori, G.2
Schall, D.3
Neumaier, D.4
Kurz, H.5
-
24
-
-
84871757503
-
Transport gap in dual-gated graphene bilayers using oxides as dielectrics
-
Lee, K., Fallahazad, B., Min, H. and Tutuc, E. Transport gap in dual-gated graphene bilayers using oxides as dielectrics. IEEE Trans. Electron Devices 60, 103-108 (2013).
-
(2013)
IEEE Trans. Electron Devices
, vol.60
, pp. 103-108
-
-
Lee, K.1
Fallahazad, B.2
Min, H.3
Tutuc, E.4
-
25
-
-
33747626322
-
Controlling the electronic structure of bilayer graphene
-
Ohta, T., Bostwick, A., Seyller, T., Horn, K. and Rotengerg, E. Controlling the electronic structure of bilayer graphene. Science 313, 951-954 (2006).
-
(2006)
Science
, vol.313
, pp. 951-954
-
-
Ohta, T.1
Bostwick, A.2
Seyller, T.3
Horn, K.4
Rotengerg, E.5
-
26
-
-
67649502407
-
Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy
-
Mak, K. F., Lui, C. H., Shan, J. and Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009).
-
(2009)
Phys. Rev. Lett.
, vol.102
, pp. 256405
-
-
Mak, K.F.1
Lui, C.H.2
Shan, J.3
Heinz, T.F.4
-
27
-
-
65549098582
-
Infrared spectroscopy of electronic bands in bilayer graphene
-
Kuzmenko, A. B. et al. Infrared spectroscopy of electronic bands in bilayer graphene. Phys. Rev. B 79, 115441 (2009).
-
(2009)
Phys. Rev. B
, vol.79
, pp. 115441
-
-
Kuzmenko, A.B.1
-
28
-
-
84944614096
-
Study of silicon-silicon dioxide structure by electron spin resonance i
-
Nishi, Y. Study of silicon-silicon dioxide structure by electron spin resonance I. Jpn. J. Appl. Phys. 10, 52-62 (1971).
-
(1971)
Jpn. J. Appl. Phys.
, vol.10
, pp. 52-62
-
-
Nishi, Y.1
-
29
-
-
0019529879
-
Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
-
Poindexter, E. H., Caplan, P. J., Deal, B. E. and Razouk, R. R. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers. J. Appl. Phys. 52, 879-884 (1981).
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 879-884
-
-
Poindexter, E.H.1
Caplan, P.J.2
Deal, B.E.3
Razouk, R.R.4
-
30
-
-
30844431996
-
MOS interface states: Overview and physicochemical perspective
-
Poindexter, E. H. MOS interface states: overview and physicochemical perspective. Semicond. Sci. Technol. 4, 961-969 (1989).
-
(1989)
Semicond. Sci. Technol.
, vol.4
, pp. 961-969
-
-
Poindexter, E.H.1
-
31
-
-
34548446361
-
Carrier statistics and quantum capacitance of graphene sheets and ribbon
-
Fang, T., Konar, A., Xing, H. and Jena, D. Carrier statistics and quantum capacitance of graphene sheets and ribbon. Appl. Phys. Lett. 91, 092109 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 092109
-
-
Fang, T.1
Konar, A.2
Xing, H.3
Jena, D.4
-
32
-
-
80052001762
-
Accessing the transport properties of graphene and its multilayers at high carrier density
-
Ye, J. et al. Accessing the transport properties of graphene and its multilayers at high carrier density. Proc. Natl. Acad. Sci. USA 108, 13002-13006 (2011).
-
(2011)
Proc. Natl. Acad. Sci. USA
, vol.108
, pp. 13002-13006
-
-
Ye, J.1
-
33
-
-
84863321067
-
Electronic compressibility of layer-polarized bilayer graphene
-
Young, A. F. et al. Electronic compressibility of layer-polarized bilayer graphene. Phys. Rev. B 85, 235458 (2012).
-
(2012)
Phys. Rev. B
, vol.85
, pp. 235458
-
-
Young, A.F.1
-
34
-
-
77956656472
-
Measurement of the electronic compressibility of bilayer graphene
-
Henriksen, E. A. and Eisenstein, J. P. Measurement of the electronic compressibility of bilayer graphene. Phys. Rev. B 82, 041412(R) (2010).
-
(2010)
Phys. Rev. B
, vol.82 R
, pp. 041412
-
-
Henriksen, E.A.1
Eisenstein, J.P.2
-
35
-
-
84896792673
-
Large Fermi energy modulation in graphene transistors with highpressure O2-annealed Y2O3 topgate insulators
-
Kanayama, K., Nagashio, K., Nishimura, T. and Toriumi, A. Large Fermi energy modulation in graphene transistors with highpressure O2-annealed Y2O3 topgate insulators. Appl. Phys. Lett. 104, 083519 (2014).
-
(2014)
Appl. Phys. Lett.
, vol.104
, pp. 083519
-
-
Kanayama, K.1
Nagashio, K.2
Nishimura, T.3
Toriumi, A.4
-
36
-
-
79961117487
-
Electrical transport properties of graphene on SiO2 with specific surface structures
-
Nagashio, K., Yamashita, T., Nishimura, T., Kita, K. and Toriumi, A. Electrical transport properties of graphene on SiO2 with specific surface structures. J. Appl. Phys. 110, 024513 (2011).
-
(2011)
J. Appl. Phys.
, vol.110
, pp. 024513
-
-
Nagashio, K.1
Yamashita, T.2
Nishimura, T.3
Kita, K.4
Toriumi, A.5
-
37
-
-
70350111155
-
Electronic transport in bilayer graphene
-
Koshino, M. Electronic transport in bilayer graphene. New J. Phys. 11, 095010 (2009).
-
(2009)
New J. Phys.
, vol.11
, pp. 095010
-
-
Koshino, M.1
-
38
-
-
84877308824
-
Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
-
Nagashio, K., Nishimura, T. and Toriumi, A. Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement. Appl. Phys. Lett. 102, 173507 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 173507
-
-
Nagashio, K.1
Nishimura, T.2
Toriumi, A.3
-
39
-
-
80052465791
-
Capacitance of graphene bilayer as a probe of layer-specific properties
-
Young, A. F. and Levitov, S. Capacitance of graphene bilayer as a probe of layer-specific properties. Phys. Rev. B 84, 085441 (2011).
-
(2011)
Phys. Rev. B
, vol.84
, pp. 085441
-
-
Young, A.F.1
Levitov, S.2
-
40
-
-
77954732824
-
Graphene field-effect transistors with self-aligned gates
-
Farmer, D. B., Lin, Y.-M. and Avouris, P. Graphene field-effect transistors with self-aligned gates. Appl. Phys. Lett. 97, 013103 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 013103
-
-
Farmer, D.B.1
Lin, Y.-M.2
Avouris, P.3
-
43
-
-
84894608525
-
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapor deposition
-
Zhu, W. et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapor deposition. Nature Communications 5, 3087 (2014).
-
(2014)
Nature Communications
, vol.5
, pp. 3087
-
-
Zhu, W.1
-
44
-
-
0015481573
-
Characterization of Thin-oxide MNOS memory transistors
-
White, M. H. and Cricchi, J. R. Characterization of Thin-oxide MNOS memory transistors. IEEE Trans. Electron Devices 19, 1280-1288 (1972).
-
(1972)
IEEE Trans. Electron Devices
, vol.19
, pp. 1280-1288
-
-
White, M.H.1
Cricchi, J.R.2
-
45
-
-
84877116756
-
High quality interfaces of InAs-on-insulator filed-effect transistors with ZrO2 gate dielectrics
-
Takei, K. et al. High quality interfaces of InAs-on-insulator filed-effect transistors with ZrO2 gate dielectrics. Appl. Phys. Lett. 102, 153513 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 153513
-
-
Takei, K.1
-
46
-
-
84864756825
-
A distributed bulk-oxide trap model for Al2O3 InGaAs MOS devices.
-
Yuan, Y. et al. A distributed bulk-oxide trap model for Al2O3 InGaAs MOS devices. IEEE Trans. Electron devices 59, 2100-2106 (2012).
-
(2012)
IEEE Trans. Electron Devices
, vol.59
, pp. 2100-2106
-
-
Yuan, Y.1
-
47
-
-
84884571286
-
Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene
-
Kim, K. S. et al. Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene. Nature Mater. 12, 887-892 (2013).
-
(2013)
Nature Mater.
, vol.12
, pp. 887-892
-
-
Kim, K.S.1
-
49
-
-
84884849725
-
Electronic transmission through AB-BA domain boundary in bilayer graphene
-
Koshino, M. Electronic transmission through AB-BA domain boundary in bilayer graphene. Phys. Rev. B 88, 115409 (2013).
-
(2013)
Phys. Rev. B
, vol.88
, pp. 115409
-
-
Koshino, M.1
-
50
-
-
0000550322
-
The effect of oxide traps on the MOS capacitance
-
Heiman, F. P. and Warfield, G. The effect of oxide traps on the MOS capacitance. IEEE Trans. Electron Devices 12, 167-178 (1965).
-
(1965)
IEEE Trans. Electron Devices
, vol.12
, pp. 167-178
-
-
Heiman, F.P.1
Warfield, G.2
-
52
-
-
84877786426
-
Ultraviolet/ozone treatment to reduce metal-graphene contact resistance
-
Li, W. et al. Ultraviolet/ozone treatment to reduce metal-graphene contact resistance. Appl. Phys. Lett. 102, 183110 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 183110
-
-
Li, W.1
|