Transport gap in dual-gated graphene bilayers using oxides as dielectrics

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 103-108

  Lee, Kayoung ^a   Fallahazad, Babak ^a   Min, Hongki ^b   Tutuc, Emanuel ^a  

^a The University of Texas at Austin   (United States)

^b Seoul National University   (South Korea)

Author keywords

Bilayer; graphene; transport gap

Indexed keywords

BI-LAYER; BI-LAYER DEVICES; CHANNEL RESISTIVITY; E-FIELD; LINEAR DEPENDENCE; ON/OFF RATIO; ROOM TEMPERATURE; SYSTEMATIC INVESTIGATIONS; TRANSPORT CHARACTERISTICS; TRANSPORT GAP; TRANSVERSE ELECTRICS;

SEMICONDUCTOR DEVICES;

GRAPHENE;

EID: 84871757503     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2228203     Document Type: Article

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