Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

IEEE Journal of Photovoltaics

Volumn 6, Issue 1, 2016, Pages 17-27

  Tomasi, Andrea ^a   Sahli, Florent ^a   Seif, Johannes Peter ^a   Fanni, Lorenzo ^a   De Nicolas Agut, Silvia Martin ^a   Geissbuhler, Jonas ^a   Paviet Salomon, Bertrand ^b   Nicolay, Sylvain ^b   Barraud, Loris ^b   Niesen, Bjoern ^a   De Wolf, Stefaan ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

^b CSEM   (Switzerland)

Author keywords

Amorphous silicon; charge carrier lifetime; crystalline silicon; heterojunctions; passivating contacts; photovoltaic cells; solar cells

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; HETEROJUNCTIONS; PASSIVATION; SILICON; SILICON WAFERS; SOLAR CELLS;

CARRIER RECOMBINATION; CRYSTALLINE SILICON WAFERS; CRYSTALLINE SILICONS; GUIDING PRINCIPLES; HIGH EFFICIENCY SILICON SOLAR CELLS; SILICON HETEROJUNCTIONS; TRANSPARENT CONDUCTIVE OXIDES; TRANSPARENT ELECTRODE;

SILICON SOLAR CELLS;

EID: 84945945456     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2484962     Document Type: Article

References (53)

1. Z. C. Holman., et al. Infrared light management in high-efficiency silicon heterojunction and rear-passivated solar cells. J. Appl. Phys., vol. 113, no. 1, art. no. 013107, Jan. 2013
2. R. A. Sinton and A. Cuevas. A quasi-steady open-circuit voltage method for solar cell characterization. presented at the 16th Eur. Photovoltaic Sol. Energy Conf., Glasgow, U. K., May 2000
3. M. Bivour, C. Reichel, M. Hermle, and S. W. Glunz. Improving the a-Si: H(p) rear emitter contact of n-Type silicon solar cells. Sol. Energy Mater. Sol. Cells, vol. 106, pp. 11-16, Nov. 2012
4. M. Bivour., et al. Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements. IEEE J. Photovoltaics, vol. 4, no. 2, pp. 566-574, Jan. 2014
5. C Battaglia., et al. Hole selective MoOx contact for silicon solar cells. Nano Lett., vol. 14, no. 2, pp. 967-971, Feb. 2014
6. C. Battaglia., et al. Silicon heterojunction solar cell with passivated hole selective MoOx contact. Appl. Phys. Lett., vol. 104, no. 11, art. no. 113902, Mar. 2014
7. J. Bullock, A. Cuevas, T. Allen, and C. Battaglia. Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells. Appl. Phys. Lett., vol. 105, no. 23, art. no. 232109, Dec. 2014
8. F. Feldmann., et al. Carrier-selective contacts for Si solar cells. Appl. Phys. Lett., vol. 104, no. 18, art. no. 181105, May 2014
9. F. Feldmann., et al. Tunnel oxide passivated contacts as an alternative to partial rear contacts. Sol. Energy Mater. Sol. Cells, vol. 131, pp. 46-50, Dec. 2014
10. J. Geissbühler., et al. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector. Appl. Phys. Lett., vol. 107, no. 8, art. no. 081601, Aug. 2015
11. A. Descoeudres., et al. Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. Appl. Phys. Lett., vol. 99, no. 12, art. no. 123506, Sep. 2011
12. M. Buchanan, J. B. Webb, and D. F. Williams. Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering. Appl. Phys. Lett., vol. 37, no. 2, pp. 213-215, Apr. 1980
13. W. W. Wenas, A. Yamada, K. Takahashi, M. Yoshino, and M. Konagai. Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition. J. Appl. Phys., vol. 70, no. 11, pp. 7119-7123, Dec. 1991
14. S. Fa'y, U. Kroll, C. Bucher, E. Vallat-Sauvain, and A. Shah. Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes. Sol. Energy Mater. Sol. Cells, vol. 86, no. 3, pp. 385-397, Mar. 2005
15. A. Tomasi., et al. Back-contacted silicon heterojunction solar cells with efficiency >21%. IEEE J. Photovoltaics, vol. 4, no. 4, pp. 1046-1054, Jul. 2014
16. R. A. Sinton and A. Cuevas. Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data. Appl. Phys. Lett., vol. 69, no. 17, pp. 2510-2512, Oct. 1996
17. S. De Wolf, C. Ballif, and M. Kondo. Kinetics of a-Si: H bulk defect and a-Si: H/c-Si interface-state reduction. Phys. Rev. B, vol. 85, no. 11, p. 113302, Mar. 2012
18. C. Leendertz, N. Mingirulli, T. F. Schulze, J. P. Kleider, B. Rech, and L. Korte. Discerning passivation mechanisms at a-Si: H/c-Si interfaces by means of photoconductance measurements. Appl. Phys. Lett., vol. 98, no. 20, art. no. 202108, May 2011.
19. S. Olibet, E. Vallat-Sauvain, and C. Ballif. Model for a-Si: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds. Phys. Rev. B, vol. 76, no. 3, art. no. 035326, Jul. 2007
20. A. G. Aberle., et al. High-efficiency silicon solar cells: Fill factor limitations and non-ideal diode behaviour due to voltage-dependent rear surface recombination velocity. Prog. Photovoltaics, Res. Appl., vol. 1, no. 2, pp. 133-143, Feb. 1993
21. A. Descoeudres., et al. >21% efficient silicon heterojunction solar cells on n- and p-Type wafers compared. IEEE J. Photovoltaics, vol. 3, no. 1, pp. 83-89, Jan. 2013
22. A. Richter, S. W. Glunz, F. Werner, J. Schmidt, and A. Cuevas. Improved quantitative description of Auger recombination in crystalline silicon. Phys. Rev. B, vol. 86, no. 16, art. no. 165202, Oct. 2012
23. S. De Wolf and G. Beaucarne. Surface passivation properties of borondoped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-Type crystalline Si substrates. Appl. Phys. Lett., vol. 88, no. 2, art. no. 022104, Jan. 2006
24. M. Reusch,M. Bivour,M. Hermle, and S. W. Glunz. Fill factor limitation of silicon heterojunction solar cells by junction recombination. Energy Procedia, vol. 38, pp. 297-304, Mar. 2013
25. O. A. Maslova., et al. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions. Appl. Phys. Lett., vol. 97, no. 25, art. no. 252110, Dec. 2010
26. S. W. Glunz, D. Biro, S. Rein, and W. Warta. Field-effect passivation of the SiO2 -Si interface. J. Appl. Phys., vol. 86, no. 1, pp. 683-691, Apr. 1999
27. R. Rößler, C. Leendertz, L. Korte, N. Mingirulli, and B. Rech. Impact of the transparent conductive oxide work function on injection-dependent a-Si: H/c-Si band bending and solar cell parameters. J. Appl. Phys., vol. 113, no. 14, art. no. 144513, Apr. 2013
28. W. Favre., et al. Influence of the transparent conductive oxide layer deposition step on electrical properties of silicon heterojunction solar cells. Appl. Phys. Lett., vol. 102, no. 18, art. no. 181118, May 2013
29. B. Demaurex., et al. Atomic-layer-deposited transparent electrodes for silicon heterojunction solar cells. IEEE J. Photovoltaics, vol. 4, no. 6, pp. 1387-1396, Nov. 2014
30. B. Macco., et al. Influence of transparent conductive oxides on passivation of a-Si: H/c-Si heterojunctions as studied by atomic layer deposited Aldoped ZnO. Semicond. Sci. Technol., vol. 29, no. 12, p. 122001, Dec. 2014
31. B. Demaurex, S. De Wolf, A. Descoeudres, Z. C. Holman, and C. Ballif. Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering. Appl. Phys. Lett., vol. 101, no. 17, p. 171604, Oct. 2012
32. S. DeWolf, A. Descoeudres, Z. C. Holman, and C. Ballif. High-efficiency silicon heterojunction solar cells: A review. Green, vol. 2, pp. 7-24, Feb. 2012
33. C. G. Choi., et al. Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by d. c. magnetron sputtering. Thin Solid Films, vol. 258, nos. 1/2, pp. 274-278, Mar. 1995
34. K. Ellmer and R. Mientus. Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide. Thin Solid Films, vol. 516, no. 14, pp. 4620-4627, May 2008
35. A. Favier, D. Munoz, S. Martín De Nicolás, and P. J. Ribeyron. Borondoped zinc oxide layers grown by metal-organic CVD for silicon heterojunction solar cells applications. Sol. Energy Mater. Sol. Cells, vol. 95, no. 4, pp. 1057-1061, Apr. 2011
36. G. Choong., et al. Transparent conductive oxides for silicon heterojunction solar cells Proc. 25th Eur. Photovoltaic Sol. Energy Conf. Exhib., Valencia, Spain, 2010, pp. 2505-2510
37. J. Steinhauser, S. Fay, N. Oliveira, E. Vallat-Sauvain, and C. Ballif. Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films. Appl. Phys. Lett., vol. 90, no. 14, art. no. 142107, Apr. 2007
38. S. De Wolf, H. Fujiwara, and M. Kondo. Impact of annealing on passivation of a-Si: H/c-Si heterostructures Proc. IEEE 33rd Photovoltaic Spec. Conf., San Diego, CA, USA, 2008, pp. 1-4
39. E. Centurioni and D. Iencinella. Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance. IEEE Electron Device Lett., vol. 24, no. 3, pp. 177-179, Mar. 2003
40. D. Pysch, C. Meinhard, N.-P. Harder,M. Hermle, and S. W. Glunz. Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells. J. Appl. Phys., vol. 110, no. 9, art. no. 094516, Nov. 2011
41. S. W. Glunz, J. Nekarda, H. Mäckel, and A. Cuevas. Analyzing back contacts of silicon solar cells by suns-Voc measurements at high illumination densities. presented at the 22nd Eur. Photovoltaic Sol. Energy Conf. Exhib., Milano, Italy, 2007
42. M. Bivour, S. Schröer, and M. Hermle. Numerical analysis of electrical TCO / a-Si: H(p) contact properties for silicon heterojunction solar cells. Energy Procedia, vol. 38, pp. 658-669, Mar. 2013
43. O. Gunawan, T. Gokmen, and D. B. Mitzi. Suns-VOC characteristics of high performance kesterite solar cells. J. Appl. Phys., vol. 116, no. 8, art. no. 084504, Aug. 2014
44. M. Bivour, S. Schröer, M. Hermle, and S. W. Glunz. Silicon heterojunction rear emitter solar cells: Less restrictions on the optoelectrical properties of front side TCOs. Sol. Energy Mater. Sol. Cells, vol. 122, pp. 120-129, Mar. 2014
45. K. Hiroshi., et al. Evaluation of boron and phosphorus doping microcrystalline silicon films. Jpn. J. Appl. Phys., vol. 23, no. 8A, p. L549, Aug. 1984
46. M. Bivour, S. Schröer, K. U. Ritzau, and M. Hermle. Influence of interfacial ITO doping on the fill factor of n- and p-Type silicon heterojunction solar cells. presented at the 4th Int. Conf. Silicon Photovoltaics, Hertogenbosch, The Netherlands, 2014
47. S. Kirner., et al. The influence of ITOdopant density on J-V characteristics of silicon heterojunction solar cells: Experiments and simulations. Energy Procedia, vol. 77, pp. 725-732, 2015
48. A. Kanevce and W. K. Metzger. The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells. J. Appl. Phys., vol. 105, no. 9, art. no. 094507, May 2009
49. J. Robertson. Band offsets, Schottky barrier heights, and their effects on electronic devices. J. Vacuum Sci. Technol. A, vol. 31, no. 5, art. no. 050821, Aug. 2013
50. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. New York, NY, USA: Wiley, 2006, pp. 133-138
51. A. Klein., et al. Surface potentials of magnetron sputtered transparent conducting oxides. Thin Solid Films, vol. 518, no. 4, pp. 1197-1203, Dec. 2009
52. A. Klein., et al. Transparent conducting oxides for photovoltaics: Manipulation of Fermi level, work function and energy band alignment. Materials, vol. 3, no. 11, pp. 4892-4914, Nov. 2010
53. K. U. Ritzau., et al. TCO work function related transport losses at the a-Si: H/TCO-contact in SHJ solar cells. Sol. Energy Mater. Sol. Cells, vol. 131, pp. 9-13, Dec. 2014