Impact of annealing on passivation of a-Si:H / c-Si heterostructures

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  De Wolf, Stefaan ^a,b   Fujiwara, Hiroyuki ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATTRACTIVE SOLUTIONS; EPITAXIALLY GROWN; HETEROSTRUCTURE DEVICES; INTERFACE PASSIVATION; INTERFACE RECOMBINATION; PASSIVATION PROPERTIES; POST DEPOSITION ANNEALING; RECOMBINATION MECHANISMS;

ANNEALING; BUFFER LAYERS; DEPOSITION; HETEROJUNCTIONS; INTERFACES (MATERIALS); PASSIVATION;

SILICON;

EID: 84879729413     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922851     Document Type: Conference Paper

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