>21% efficient silicon heterojunction solar cells on n-and p-type wafers compared

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 83-89

  Descoeudres, Antoine ^a   Holman, Zachary C ^a   Barraud, Loris ^a   Morel, Sophie ^a   De Wolf, Stefaan ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

Author keywords

Amorphous silicon; crystalline silicon; heterojunctions; photovoltaic cells

Indexed keywords

CAPTURE CROSS SECTIONS; CRYSTALLINE SILICONS; CZOCHRALSKI; FILL FACTOR; FLOAT ZONES; HIGH QUALITY; INTERFACE DEFECTS; MINORITY CARRIER LIFETIMES; P-TYPE; P-TYPE WAFER; PASSIVATION LAYER; SILICON HETEROJUNCTIONS;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; EFFICIENCY; HETEROJUNCTIONS; PHOTOVOLTAIC CELLS; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 84871731559     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2209407     Document Type: Article

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