Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

Semiconductor Science and Technology

Volumn 29, Issue 12, 2014, Pages

  Macco, B ^a   Deligiannis, D ^b   Smit, S ^a   Van Swaaij, R A C M M ^b   Zeman, M ^b   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Atomic layer deposition; Passivation; Silicon heterojunction; Solar cell; Transparent conductive oxide

Indexed keywords

ALUMINUM; ATOMS; DEPOSITION; HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS; ZINC OXIDE;

A-SI: H/C-SI HETEROJUNCTIONS; AL-DOPED ZINC OXIDE; ATOMIC LAYER DEPOSITED; CHEMICAL PASSIVATION; EFFICIENCY GAIN; SILICON HETEROJUNCTIONS; TRANSPARENT CONDUCTIVE OXIDE (TCOS); TRANSPARENT CONDUCTIVE OXIDES;

ATOMIC LAYER DEPOSITION;

EID: 84911943136     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/12/122001     Document Type: Article

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