SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 25, 2010, Pages

Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

(9) Maslova, O A a,b Alvarez, J a Gushina, E V c Favre, W a Gueunier Farret, M E a Gudovskikh, A S b Ankudinov, A V c Terukov, E I c Kleider, J P a

a UNIV PARIS SUD (France)

b ST PETERSBURG ACADEMIC UNIVERSITY (Russian Federation)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GASES; HETEROJUNCTIONS; HYDROGENATION; PROBES;

A-SI:H; CONDUCTANCE MEASUREMENT; CONDUCTING PROBE ATOMIC FORCE MICROSCOPIES; CONDUCTIVE CHANNELS; CRYSTALLINE SILICONS; HOLE GAS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); SI SURFACES; SILICON HETEROJUNCTIONS; STRONG INVERSION; SURFACE LAYERS; TWO-DIMENSION; VALENCE BAND OFFSETS;

AMORPHOUS SILICON;

EID: 78650721049 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525166 Document Type: Article

Times cited : (32)

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